001381347 000__ 02865nam\a2200541Ki\4500
001381347 001__ 1381347
001381347 003__ NhCcYBP
001381347 005__ 20220104003119.0
001381347 006__ m\\\\\o\\d\\\\\\\\
001381347 007__ cr\cn\nnnunnun
001381347 008__ 210801t20222022flu\\\\\o\\\\\000\0\eng\d
001381347 020__ $$a9781000454550$$q(electronic book)
001381347 020__ $$a100045455X$$q(electronic book)
001381347 020__ $$a9781000454567$$q(electronic book)
001381347 020__ $$a1000454568$$q(electronic book)
001381347 020__ $$a9781003093428$$q(electronic book)
001381347 020__ $$a1003093426$$q(electronic book)
001381347 020__ $$z0367554143
001381347 020__ $$z9780367554149
001381347 0247_ $$a10.1201/9781003093428$$2doi
001381347 040__ $$aNhCcYBP$$cNhCcYBP
001381347 050_4 $$aTK7871.95$$b.A38 2022
001381347 08204 $$a621.3815/284$$223
001381347 24500 $$aAdvanced indium arsenide-based HEMT architectures for terahertz applications /$$cedited by N. Mohankumar.
001381347 250__ $$aFirst edition.
001381347 264_1 $$aBoca Raton, FL :$$bCRC Press,$$c2022.
001381347 264_4 $$c©2022
001381347 300__ $$a1 online resource.
001381347 336__ $$atext$$btxt$$2rdacontent
001381347 337__ $$acomputer$$bc$$2rdamedia
001381347 338__ $$aonline resource$$bcr$$2rdacarrier
001381347 5050_ $$aChapter 1: Introduction to III-V materials and HEMT Structure / Sanhita Manna -- Chapter 2: III-V Hetero Structure Devices for Ultra Low, High Power and High Breakdown Applications / D.Godwinraj -- Chapter 3: III-V Hetero Structure Devices for High Frequency Applications / R. Saravana Kumar -- Chapter 4: Overview of THz Applications / T. Nagarjuna -- Chapter 5: Device and Simulation Framework of InAs HEMTs / V. Mahesh -- Chapter 6: Single Gate (SG) InAs Based HEMTs Architecture for THz Applications / M. Arun Kumar -- Chapter 7: Effect of Gate Scaling and Composite Channel in InAs HEMTs / C. Kamalanathan -- Chapter 8: Double Gate (DG) InAs Based HEMT Architecture for THz Applications / R. Poorna Chandran -- Chapter 9: Influence of Dual Channel and Drain Side Recess Length in Double Gate InAs HEMTs / Y. Vamshidhar -- Chapter 10: Noise Analysis in Dual Quantum Well InAs Based Double Gate (DG) -- HEMT / Girish Shankar Mishra.
001381347 506__ $$aAccess limited to authorized users
001381347 533__ $$aElectronic reproduction.$$bAnn Arbor, MI$$nAvailable via World Wide Web.
001381347 588__ $$aDescription based on online resource; title from digital title page (viewed on October 25, 2021).
001381347 650_0 $$aModulation-doped field-effect transistors.
001381347 650_0 $$aIndium arsenide.
001381347 650_0 $$aSemiconductors.
001381347 650_0 $$aTerahertz technology.
001381347 655_0 $$aElectronic books
001381347 7001_ $$aMohankumar, N.,$$eeditor.
001381347 7102_ $$aProQuest (Firm)
001381347 77608 $$iPrint version:$$z0367554143$$z9780367554149
001381347 852__ $$bebk
001381347 85640 $$3GOBI DDA$$uhttps://univsouthin.idm.oclc.org/login?url=https://ebookcentral.proquest.com/lib/usiricelib-ebooks/detail.action?docID=6685651$$zOnline Access
001381347 909CO $$ooai:library.usi.edu:1381347$$pGLOBAL_SET
001381347 980__ $$aBIB
001381347 980__ $$aEBOOK
001381347 982__ $$aEbook
001381347 983__ $$aOnline