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001383305 020__ $$z9783736992870
001383305 020__ $$a9783736982871 (e-book)
001383305 035__ $$a(MiAaPQ)EBC5022000
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001383305 035__ $$a(OCoLC)1003264027
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001383305 050_4 $$aTK7871.95$$b.N673 2016
001383305 0820_ $$a621.3815284$$223
001383305 1001_ $$aNosaeva, Ksenia,$$eauthor.
001383305 24510 $$aIndium phosphide HBT in thermally optimized periphery for applications up to 300 GHz /$$cvorgelegt von M. Eng. and Tech. Ksenia Nosaeva.
001383305 250__ $$a1. Auflage.
001383305 264_1 $$aGottingen, [Germany] :$$bCuvillier Verlag,$$c2016.
001383305 264_4 $$c©2016
001383305 300__ $$a1 online resource (155 pages) :$$billustrations (some color), tables, graphs.
001383305 336__ $$atext$$2rdacontent
001383305 337__ $$acomputer$$2rdamedia
001383305 338__ $$aonline resource$$2rdacarrier
001383305 4900_ $$aInnovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut fur Hochstfrequenztechnik ;$$vBand 36
001383305 504__ $$aIncludes bibliographical references.
001383305 506__ $$aAccess limited to authorized users.
001383305 588__ $$aDescription based on online resource; title from PDF title page (ebrary, viewed September 29, 2017).
001383305 650_0 $$aModulation-doped field-effect transistors.
001383305 655_0 $$aElectronic books
001383305 77608 $$iPrint version:$$aNosaeva, Ksenia.$$tIndium phosphide HBT in thermally optimized periphery for applications up to 300 GHz.$$b1. Auflage.$$dGottingen, [Germany] : Cuvillier Verlag, c2016 $$z9783736992870
001383305 852__ $$bebk
001383305 85640 $$3ProQuest Ebook Central Academic Complete $$uhttps://univsouthin.idm.oclc.org/login?url=https://ebookcentral.proquest.com/lib/usiricelib-ebooks/detail.action?docID=5022000$$zOnline Access
001383305 909CO $$ooai:library.usi.edu:1383305$$pGLOBAL_SET
001383305 980__ $$aBIB
001383305 980__ $$aEBOOK
001383305 982__ $$aEbook
001383305 983__ $$aOnline