Emerging non-volatile memory technologies : physics, engineering, and applications / Wen Siang Lew, Gerard Joseph Lim, Putu Andhita Dananjaya, editors.
Lew, Wen Siang, editor.; Lim, Gerard Joseph, editor.; Dananjaya, Putu Andhita, editor.
2021
TK7895.M4
Available Online

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Title Emerging non-volatile memory technologies : physics, engineering, and applications / Wen Siang Lew, Gerard Joseph Lim, Putu Andhita Dananjaya, editors.
ISBN 9789811569128 (electronic bk.)
9811569126 (electronic bk.)
981156910X
9789811569104
DOI https://doi.org/10.1007/978-981-15-6912-8
Publication Details Singapore : Springer, 2021.
Language English
Description 1 online resource
Item Number 10.1007/978-981-15-6912-8 doi
Call Number TK7895.M4
Dewey Decimal Classification 621.39/73
Summary This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.
Access Note Access limited to authorized users.
Digital File Characteristics text file
PDF
Source of Description Online resource; title from PDF title page (SpringerLink, viewed March 2, 2021).
Added Author Lew, Wen Siang, editor.
Lim, Gerard Joseph, editor.
Dananjaya, Putu Andhita, editor.
Available in Other Form Emerging non-volatile memory technologies.
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All Resources
Microwave Oscillators and Detectors Based on Magnetic Tunnel Junctions
Spin Transfer Torque Magnetoresistive Random Access Memory
Current-Driven Domain Wall Dynamics in Magnetic Heterostructures for Memory Applications
Electric-field-controlled MRAM: Physics and Applications
Chiral Magnetic Domain Wall & Skyrmion Memory Devices
Circuit Design for Non-volatile Magnetic Memory
Domain Wall Programmable Magnetic Logic
3D Nanomagnetic Logic
Spintronics for Neuromorphic Engineering
Resistive Random Access Memory: Device Physics and Array Architectures
RRAM Characterization and Modelling
RRAM-based Neuromorphic Computing Systems
An Automatic Sound Classification Framework with Non-Volatile Memory.

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