@article{1433481,
      recid = {1433481},
      author = {Montero Álvarez, Daniel.},
      title = {Near infrared detectors based on silicon supersaturated  with transition metals /},
      publisher = {Springer,},
      address = {Cham :},
      pages = {1 online resource (262 pages)},
      year = {2021},
      note = {Doctoral Thesis accepted by Universidad Complutense de  Madrid, Madrid, Spain.},
      abstract = {This thesis makes a significant contribution to the  development of cheaper Si-based Infrared detectors,  operating at room temperature. In particular, the work is  focused in the integration of the Ti supersaturated Si  material into a CMOS Image Sensor route, the technology of  choice for imaging nowadays due to its low-cost and high  resolution. First, the material is fabricated using ion  implantation of Ti atoms at high concentrations.  Afterwards, the crystallinity is recovered by means of a  pulsed laser process. The material is used to fabricate  planar photodiodes, which are later characterized using  current-voltage and quantum efficiency measurements. The  prototypes showed improved sub-bandgap responsivity up to  0.45 eV at room temperature. The work is further supported  by a collaboration with STMicroelectronics, where the  supersaturated material was integrated into CMOS-based  sensors at industry level. The results show that Ti  supersaturated Si is compatible in terms of contamination,  process integration and uniformity. The devices showed  similar performance to non-implanted devices in the visible  region. This fact leaves the door open for further  integration of supersaturated materials into CMOS Image  Sensors.},
      url = {http://library.usi.edu/record/1433481},
      doi = {https://doi.org/10.1007/978-3-030-63826-9},
}