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001433481 001__ 1433481
001433481 003__ OCoLC
001433481 005__ 20230309003608.0
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001433481 019__ $$a1230123407$$a1236329655$$a1238203625$$a1249945179
001433481 020__ $$a9783030638269$$q(electronic bk.)
001433481 020__ $$a303063826X$$q(electronic bk.)
001433481 020__ $$z3030638251
001433481 020__ $$z9783030638252
001433481 0247_ $$a10.1007/978-3-030-63826-9$$2doi
001433481 035__ $$aSP(OCoLC)1231609662
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001433481 08204 $$a539.77
001433481 08204 $$a620.11295$$223
001433481 08204 $$a620.11297$$223
001433481 1001_ $$aMontero Álvarez, Daniel.
001433481 24510 $$aNear infrared detectors based on silicon supersaturated with transition metals /$$cDaniel Montero Álvarez.
001433481 260__ $$aCham :$$bSpringer,$$c2021.
001433481 300__ $$a1 online resource (262 pages)
001433481 336__ $$atext$$btxt$$2rdacontent
001433481 337__ $$acomputer$$bc$$2rdamedia
001433481 338__ $$aonline resource$$bcr$$2rdacarrier
001433481 347__ $$atext file
001433481 347__ $$bPDF
001433481 4901_ $$aSpringer Theses
001433481 500__ $$aDoctoral Thesis accepted by Universidad Complutense de Madrid, Madrid, Spain.
001433481 5050_ $$aIntroduction -- Experimental techniques -- Results: NLA using a short pulse duration KrF laser -- Results: NLA using a long pulse duration XeCl laser -- Results: Integrating the supersaturated material in a CMOS pixel matrix.
001433481 506__ $$aAccess limited to authorized users.
001433481 520__ $$aThis thesis makes a significant contribution to the development of cheaper Si-based Infrared detectors, operating at room temperature. In particular, the work is focused in the integration of the Ti supersaturated Si material into a CMOS Image Sensor route, the technology of choice for imaging nowadays due to its low-cost and high resolution. First, the material is fabricated using ion implantation of Ti atoms at high concentrations. Afterwards, the crystallinity is recovered by means of a pulsed laser process. The material is used to fabricate planar photodiodes, which are later characterized using current-voltage and quantum efficiency measurements. The prototypes showed improved sub-bandgap responsivity up to 0.45 eV at room temperature. The work is further supported by a collaboration with STMicroelectronics, where the supersaturated material was integrated into CMOS-based sensors at industry level. The results show that Ti supersaturated Si is compatible in terms of contamination, process integration and uniformity. The devices showed similar performance to non-implanted devices in the visible region. This fact leaves the door open for further integration of supersaturated materials into CMOS Image Sensors.
001433481 588__ $$aDescription based on print version record.
001433481 650_0 $$aInfrared detectors$$xMaterials.
001433481 650_0 $$aSilicon compounds.
001433481 650_6 $$aDétecteurs de rayonnement infrarouge$$xMatériaux.
001433481 650_6 $$aSilicium$$xComposés.
001433481 655_0 $$aElectronic books.
001433481 77608 $$iPrint version:$$aMontero Álvarez, Daniel$$tNear Infrared Detectors Based on Silicon Supersaturated with Transition Metals$$dCham : Springer International Publishing AG,c2021$$z9783030638252
001433481 830_0 $$aSpringer theses.
001433481 852__ $$bebk
001433481 85640 $$3Springer Nature$$uhttps://univsouthin.idm.oclc.org/login?url=https://link.springer.com/10.1007/978-3-030-63826-9$$zOnline Access$$91397441.1
001433481 909CO $$ooai:library.usi.edu:1433481$$pGLOBAL_SET
001433481 980__ $$aBIB
001433481 980__ $$aEBOOK
001433481 982__ $$aEbook
001433481 983__ $$aOnline
001433481 994__ $$a92$$bISE