@article{1440515,
      recid = {1440515},
      author = {Ozdemir, Servet,},
      title = {Electronic properties of rhombohedral graphite /},
      pages = {1 online resource :},
      note = {"Doctoral thesis accepted by The University of Manchester,  UK."},
      abstract = {This thesis presents the first systematic electron  transport investigation of rhombohedral graphite (RG) films  and thus lies at the interface of graphene physics, vdW  heterostructure devices and topological matter. Electron  transport investigation into the rhombohedral phase of  graphite was limited to a few layers of graphene due to the  competing hexagonal phase being more abundant. This work  reports that in exfoliated natural graphite films,  rhombohedral domains of up to 50 layers can be found. In  the low energy limit, these domains behave as an N-layer  generalisation of graphene. Moreover, being a potential  alternative to twisted bilayer graphene systems, RG films  show a spontaneous metal-insulator transition, with  characteristic symmetry properties that could be described  by mean-field theory where superconductivity is also  predicted in these low energy bands. A nodal-line semimetal  in the bulk limit, RG thin films are a 3D generalisation of  the simplest topological insulator model: the  Su-Schrieffer-Heeger chain. Similar to the more usual  topological insulators, RG films exhibit parallel  conduction of bulk states, which undergo three-dimensional  quantum transport that reflects bulk topology.},
      url = {http://library.usi.edu/record/1440515},
      doi = {https://doi.org/10.1007/978-3-030-88307-2},
}