Resistive switching : oxide materials, mechanisms, devices and operations / Jennifer Rupp, Daniele Ielmini, Ilia Valov, editors.
Rupp, Jennifer, editor.; Ielmini, Daniele, editor.; Valov, Ilia, editor.
2021
TK7872.R4
Available Online

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Title Resistive switching : oxide materials, mechanisms, devices and operations / Jennifer Rupp, Daniele Ielmini, Ilia Valov, editors.
ISBN 9783030424244 (electronic bk.)
3030424243 (electronic bk.)
9783030424237
3030424235
DOI https://doi.org/10.1007/978-3-030-42424-4
Published Cham : Springer, 2021.
Language English
Description 1 online resource (1 volume) : illustrations (black and white)
Other Standard Identifiers 10.1007/978-3-030-42424-4 doi
Call Number TK7872.R4
Dewey Decimal Classification 621.3841/33
Summary This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices. It covers defect kinetic models for switching, ReRAM deposition/fabrication methods, tuning thin film microstructures, and material/device characterization and modeling. A slate of world-renowned authors address the influence of type of ionic carriers, their mobility, the role of the local and chemical composition and environment, and facilitate readers understanding of the effects of composition and structure at different length scales (e.g., crystalline vs amorphous phases, impact of extended defects such as dislocations and grain boundaries). ReRAMs show outstanding potential for scaling down to the atomic level, fast operation in the nanosecond range, low power consumption, and non-volatile storage. The book is ideal for materials scientists and engineers concerned with novel types of nanoelectronic devices such as memories, memristors, and switches for logic and neuromorphic computing circuits beyond the von Neumann concept: -Explains diffusive processes at room temperature and materials/materials combination in resistive switching; -Illustrates the role of defects in zero, one, and two dimensions; -Features applications of ReRAMs in engineering such as novel computing architectures.
Note Includes index.
Access Note Access limited to authorized users.
Source of Description Description based on print version record.
Added Author Rupp, Jennifer, editor.
Ielmini, Daniele, editor.
Valov, Ilia, editor.
Series Electronic materials: science & technology.
Available in Other Form Resistive switching.
Linked Resources Online Access
Record Appears in Online Resources > Ebooks
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Preface
Memristive computing devices and applications
Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication
Modeling resistive switching materials and devices across scales
Review of mechanisms proposed for redox based resistive switching structures
Probing electrochemistry at the nanoscale: in situ TEM and STM characterizations of conducting filaments in memristive devices
Nanoscale characterization of resistive switching using advanced conductive atomic force microscopy based setups
SiO2 based conductive bridging random access memory
Reset switching statistics of TaOx-based Memristor
Effect of O2- migration in Pt/HfO2/Ti/Pt structure
Operating mechanism and resistive switching characteristics of two- and three-terminal atomic switches using a thin metal oxide layer
Interface-type resistive switching in perovskite materials
Volume Resistive Switching in metallic perovskite oxides driven by the Metal-Insulator Transition
Resistive states in strontium titanate thin films: Bias effects and mechanisms at high and low temperature
Single crystalline SrTiO3 as memristive model system: From materials science to neurological and psychological functions
Resistive switching memory using biomaterials
Optical memristive switches.

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