001442495 000__ 05025cam\a2200589\i\4500
001442495 001__ 1442495
001442495 003__ OCoLC
001442495 005__ 20230310003421.0
001442495 006__ m\\\\\o\\d\\\\\\\\
001442495 007__ cr\cn\nnnunnun
001442495 008__ 211026s2021\\\\sz\a\\\\o\\\\\001\0\eng\d
001442495 019__ $$a1277279070$$a1280048614$$a1280107660
001442495 020__ $$a9783030424244$$q(electronic bk.)
001442495 020__ $$a3030424243$$q(electronic bk.)
001442495 020__ $$z9783030424237
001442495 020__ $$z3030424235
001442495 0247_ $$a10.1007/978-3-030-42424-4$$2doi
001442495 035__ $$aSP(OCoLC)1280402518
001442495 040__ $$aGW5XE$$beng$$erda$$epn$$cGW5XE$$dYDX$$dOCLCF$$dOCLCO$$dOCLCQ$$dOCLCO$$dUKAHL$$dOCLCQ
001442495 049__ $$aISEA
001442495 050_4 $$aTK7872.R4
001442495 08204 $$a621.3841/33$$223
001442495 24500 $$aResistive switching :$$boxide materials, mechanisms, devices and operations /$$cJennifer Rupp, Daniele Ielmini, Ilia Valov, editors.
001442495 264_1 $$aCham :$$bSpringer,$$c2021.
001442495 300__ $$a1 online resource (1 volume) :$$billustrations (black and white)
001442495 336__ $$atext$$btxt$$2rdacontent
001442495 337__ $$acomputer$$bc$$2rdamedia
001442495 338__ $$aonline resource$$bcr$$2rdacarrier
001442495 4901_ $$aElectronic materials : science & technology
001442495 500__ $$aIncludes index.
001442495 5050_ $$aPreface -- Memristive computing devices and applications -- Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication -- Modeling resistive switching materials and devices across scales -- Review of mechanisms proposed for redox based resistive switching structures -- Probing electrochemistry at the nanoscale: in situ TEM and STM characterizations of conducting filaments in memristive devices -- Nanoscale characterization of resistive switching using advanced conductive atomic force microscopy based setups -- SiO2 based conductive bridging random access memory -- Reset switching statistics of TaOx-based Memristor -- Effect of O2- migration in Pt/HfO2/Ti/Pt structure -- Operating mechanism and resistive switching characteristics of two- and three-terminal atomic switches using a thin metal oxide layer -- Interface-type resistive switching in perovskite materials -- Volume Resistive Switching in metallic perovskite oxides driven by the Metal-Insulator Transition -- Resistive states in strontium titanate thin films: Bias effects and mechanisms at high and low temperature -- Single crystalline SrTiO3 as memristive model system: From materials science to neurological and psychological functions -- Resistive switching memory using biomaterials -- Optical memristive switches.
001442495 506__ $$aAccess limited to authorized users.
001442495 520__ $$aThis book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices. It covers defect kinetic models for switching, ReRAM deposition/fabrication methods, tuning thin film microstructures, and material/device characterization and modeling. A slate of world-renowned authors address the influence of type of ionic carriers, their mobility, the role of the local and chemical composition and environment, and facilitate readers understanding of the effects of composition and structure at different length scales (e.g., crystalline vs amorphous phases, impact of extended defects such as dislocations and grain boundaries). ReRAMs show outstanding potential for scaling down to the atomic level, fast operation in the nanosecond range, low power consumption, and non-volatile storage. The book is ideal for materials scientists and engineers concerned with novel types of nanoelectronic devices such as memories, memristors, and switches for logic and neuromorphic computing circuits beyond the von Neumann concept: -Explains diffusive processes at room temperature and materials/materials combination in resistive switching; -Illustrates the role of defects in zero, one, and two dimensions; -Features applications of ReRAMs in engineering such as novel computing architectures.
001442495 588__ $$aDescription based on print version record.
001442495 650_0 $$aElectric resistors.
001442495 650_0 $$aSwitching circuits.
001442495 650_0 $$aElectric resistors$$xMaterials.
001442495 650_6 $$aRésistances électriques.
001442495 650_6 $$aCircuits de commutation.
001442495 650_6 $$aRésistances électriques$$xMatériaux.
001442495 655_0 $$aElectronic books.
001442495 7001_ $$aRupp, Jennifer,$$eeditor.
001442495 7001_ $$aIelmini, Daniele,$$eeditor.
001442495 7001_ $$aValov, Ilia,$$eeditor.
001442495 77608 $$iPrint version:$$tResistive switching.$$dCham : Springer, 2021$$z9783030424237$$w(OCoLC)1272899456
001442495 830_0 $$aElectronic materials: science & technology.
001442495 852__ $$bebk
001442495 85640 $$3Springer Nature$$uhttps://univsouthin.idm.oclc.org/login?url=https://link.springer.com/10.1007/978-3-030-42424-4$$zOnline Access$$91397441.1
001442495 909CO $$ooai:library.usi.edu:1442495$$pGLOBAL_SET
001442495 980__ $$aBIB
001442495 980__ $$aEBOOK
001442495 982__ $$aEbook
001442495 983__ $$aOnline
001442495 994__ $$a92$$bISE