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001442828 020__ $$a9789811661204$$q(electronic bk.)
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001442828 0247_ $$a10.1007/978-981-16-6120-4$$2doi
001442828 035__ $$aSP(OCoLC)1286661976
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001442828 049__ $$aISEA
001442828 050_4 $$aTK7871.99.M44$$bR43 2022
001442828 08204 $$a621.3815$$223
001442828 24500 $$aRecent advances in PMOS negative bias temperature instability :$$bcharacterization and modeling of device architecture, material and process impact /$$cSouvik Mahapatra, editor.
001442828 264_1 $$aSingapore :$$bSpringer,$$c[2022]
001442828 264_4 $$c©2022
001442828 300__ $$a1 online resource :$$billustrations (chiefly color)
001442828 336__ $$atext$$btxt$$2rdacontent
001442828 337__ $$acomputer$$bc$$2rdamedia
001442828 338__ $$aonline resource$$bcr$$2rdacarrier
001442828 347__ $$atext file
001442828 347__ $$bPDF
001442828 500__ $$aIncludes index.
001442828 5050_ $$aCharacterization of NBTI Parametric Drift -- BAT Framework Modeling of Gate First HKMG Si and SiGe Channel FDSOI MOSFETs -- BTI Analysis Tool (BAT) Model Framework -- BAT Framework Modeling of RMG HKMG SOI FinFETs -- BAT Framework Modeling of RMG HKMG GAA-SNS FETs -- BAT Framework Modeling of RMG HKMG Si and SiGe Channel FinFETs -- BAT Framework Modeling of Gate First HKMG Si Channel MOSFETs -- BAT Framework Modeling of AC NBTI: Stress Mode, Duty Cycle and Frequency -- BAT Framework Modeling of Dimension Scaling in FinFETs and GAA-SNS FETs -- BTI Analysis Tool (BAT) Model Framework-Generation of Interface Traps -- Device Architecture, Material and Process Dependencies of NBTI Parametric Drift -- Physical Mechanism of NBTI Parametric Drift -- BAT Framework Modeling of Gate First HKMG Si-capped SiGe Channel MOSFETs -- BTI Analysis Tool (BAT) Model Framework-Interface Trap Occupancy and Hole Trapping.
001442828 506__ $$aAccess limited to authorized users.
001442828 520__ $$aThis book covers advances in Negative Bias Temperature Instability (NBTI) and will prove useful to researchers and professionals in the semiconductor devices areas. NBTI continues to remain as an important reliability issue for CMOS transistors and circuits. Development of NBTI resilient technology relies on utilizing suitable stress conditions, artifact free measurements and accurate physics-based models for the reliable determination of degradation at end-of-life, as well as understanding the process, material and device architectural impacts. This book discusses: Ultra-fast measurements and modelling of parametric drift due to NBTI in different transistor architectures: planar bulk and FDSOI p-MOSFETs, p-FinFETs and GAA-SNS p-FETs, with Silicon and Silicon Germanium channels. BTI Analysis Tool (BAT), a comprehensive physics-based framework, to model the measured time kinetics of parametric drift during and after DC and AC stress, at different stress and recovery biases and temperature, as well as pulse duty cycle and frequency. The Reaction Diffusion (RD) model is used for generated interface traps, Transient Trap Occupancy Model (TTOM) for charge occupancy of the generated interface traps and their contribution, Activated Barrier Double Well Thermionic (ABDWT) model for hole trapping in pre-existing bulk gate insulator traps, and Reaction Diffusion Drift (RDD) model for bulk trap generation in the BAT framework; NBTI parametric drift is due to uncorrelated contributions from the trap generation (interface, bulk) and trapping processes. Analysis and modelling of Nitrogen incorporation into the gate insulator, Germanium incorporation into the channel, and mechanical stress effects due to changes in the transistor layout or device dimensions; similarities and differences of (100) surface dominated planar and GAA MOSFETs and (110) sidewall dominated FinFETs are analysed.
001442828 588__ $$aOnline resource; title from PDF title page (SpringerLink, viewed December 9, 2021).
001442828 650_0 $$aMetal oxide semiconductors, Complementary$$xEffect of temperature on.
001442828 650_0 $$aMetal oxide semiconductors, Complementary$$xReliability.
001442828 650_6 $$aMOS complémentaires$$xEffets de la température sur.
001442828 650_6 $$aMOS complémentaires$$xFiabilité.
001442828 655_0 $$aElectronic books.
001442828 7001_ $$aMahapatra, Souvik,$$eeditor.
001442828 77608 $$iPrint version:$$tRecent advances in PMOS negative bias temperature instability.$$dSingapore : Springer, [2022]$$z9811661197$$z9789811661198$$w(OCoLC)1263864906
001442828 852__ $$bebk
001442828 85640 $$3Springer Nature$$uhttps://univsouthin.idm.oclc.org/login?url=https://link.springer.com/10.1007/978-981-16-6120-4$$zOnline Access$$91397441.1
001442828 909CO $$ooai:library.usi.edu:1442828$$pGLOBAL_SET
001442828 980__ $$aBIB
001442828 980__ $$aEBOOK
001442828 982__ $$aEbook
001442828 983__ $$aOnline
001442828 994__ $$a92$$bISE