@article{1443255,
      recid = {1443255},
      author = {Freeman, Yuri,},
      title = {Tantalum and niobium-based capacitors : science,  technology, and applications /},
      pages = {1 online resource :},
      abstract = {This book provides a comprehensive analysis of the  science, technology, and applications of Tantalum and  Niobium-based capacitors. The author discusses  fundamentals, focusing on thermodynamic stability, major  degradation processes and conduction mechanisms in the  basic structure of Me-Me2O5-cathode (Me: Ta, Nb).  Technology-related coverage includes chapters on the major  manufacturing steps from capacitor grade powder to the  testing of finished capacitors. Applications include high  reliability, high charge and energy efficiency, high  working voltages, high temperatures, etc. The links between  the scientific foundation, breakthrough technologies and  outstanding performance and reliability of the capacitors  are demonstrated. The theoretical models discussed include  the thermodynamics of the amorphous dielectrics, conduction  mechanisms in metal-insulator-semiconductor (MIS)  structures, band diagrams of the organic semiconductors,  etc. Provides a single-source reference to the science,  technology, and applications of Tantalum and Niobium-based  capacitors; Focuses on Polymer Tantalum capacitors, with  rapidly growing applications in special and commercial  electronics; Discusses in detail conduction and degradation  mechanisms in amorphous dielectrics and multilayer  capacitor structures with amorphous dielectrics, such as  metal-insulator-semiconductor (MIS) structures with  inorganic and organic semiconductors, as well as MOSFET  transistors with high k dielectrics.},
      url = {http://library.usi.edu/record/1443255},
      doi = {https://doi.org/10.1007/978-3-030-89514-3},
}