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001443255 001__ 1443255
001443255 003__ OCoLC
001443255 005__ 20230310003534.0
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001443255 019__ $$a1288670459$$a1288962631$$a1289233748$$a1289366922$$a1294358814$$a1296666246
001443255 020__ $$a9783030895143$$q(electronic bk.)
001443255 020__ $$a3030895149$$q(electronic bk.)
001443255 020__ $$z9783030895136
001443255 020__ $$z3030895130
001443255 0247_ $$a10.1007/978-3-030-89514-3$$2doi
001443255 035__ $$aSP(OCoLC)1288636254
001443255 040__ $$aYDX$$beng$$erda$$epn$$cYDX$$dGW5XE$$dEBLCP$$dOCLCF$$dOCLCO$$dDCT$$dDKU$$dOCLCQ$$dOCLCO$$dOCLCQ
001443255 049__ $$aISEA
001443255 050_4 $$aTK7872.C65$$bF74 2022
001443255 08204 $$a621.31/5$$223
001443255 1001_ $$aFreeman, Yuri,$$eauthor.
001443255 24510 $$aTantalum and niobium-based capacitors :$$bscience, technology, and applications /$$cYuri Freeman.
001443255 250__ $$aSecond edition.
001443255 264_1 $$aCham :$$bSpringer,$$c[2022]
001443255 264_4 $$c©2022
001443255 300__ $$a1 online resource :$$billustrations
001443255 336__ $$atext$$btxt$$2rdacontent
001443255 337__ $$acomputer$$bc$$2rdamedia
001443255 338__ $$aonline resource$$bcr$$2rdacarrier
001443255 347__ $$atext file
001443255 347__ $$bPDF
001443255 504__ $$aIncludes bibliographical references and index.
001443255 5050_ $$aIntroduction -- 1: Major Degradation Mechanisms -- 2: Basic Technology -- 3: Applications -- 4: Conclusion.
001443255 506__ $$aAccess limited to authorized users.
001443255 520__ $$aThis book provides a comprehensive analysis of the science, technology, and applications of Tantalum and Niobium-based capacitors. The author discusses fundamentals, focusing on thermodynamic stability, major degradation processes and conduction mechanisms in the basic structure of Me-Me2O5-cathode (Me: Ta, Nb). Technology-related coverage includes chapters on the major manufacturing steps from capacitor grade powder to the testing of finished capacitors. Applications include high reliability, high charge and energy efficiency, high working voltages, high temperatures, etc. The links between the scientific foundation, breakthrough technologies and outstanding performance and reliability of the capacitors are demonstrated. The theoretical models discussed include the thermodynamics of the amorphous dielectrics, conduction mechanisms in metal-insulator-semiconductor (MIS) structures, band diagrams of the organic semiconductors, etc. Provides a single-source reference to the science, technology, and applications of Tantalum and Niobium-based capacitors; Focuses on Polymer Tantalum capacitors, with rapidly growing applications in special and commercial electronics; Discusses in detail conduction and degradation mechanisms in amorphous dielectrics and multilayer capacitor structures with amorphous dielectrics, such as metal-insulator-semiconductor (MIS) structures with inorganic and organic semiconductors, as well as MOSFET transistors with high k dielectrics.
001443255 588__ $$aOnline resource; title from PDF title page (SpringerLink, viewed December 22, 2021).
001443255 650_0 $$aCapacitors.
001443255 650_0 $$aCapacitors$$xMaterials.
001443255 650_6 $$aCondensateurs électriques.
001443255 650_6 $$aCondensateurs électriques$$xMatériaux.
001443255 655_0 $$aElectronic books.
001443255 77608 $$iPrint version:$$aFreeman, Yuri.$$tTantalum and niobium-based capacitors.$$bSecond edition.$$dCham : Springer, [2022]$$z3030895130$$z9783030895136$$w(OCoLC)1268326996
001443255 852__ $$bebk
001443255 85640 $$3Springer Nature$$uhttps://univsouthin.idm.oclc.org/login?url=https://link.springer.com/10.1007/978-3-030-89514-3$$zOnline Access$$91397441.1
001443255 909CO $$ooai:library.usi.edu:1443255$$pGLOBAL_SET
001443255 980__ $$aBIB
001443255 980__ $$aEBOOK
001443255 982__ $$aEbook
001443255 983__ $$aOnline
001443255 994__ $$a92$$bISE