001443297 000__ 03362cam\a2200505Ia\4500
001443297 001__ 1443297
001443297 003__ OCoLC
001443297 005__ 20230310003537.0
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001443297 008__ 211217s2022\\\\sz\\\\\\ob\\\\001\0\eng\d
001443297 019__ $$a1289364619$$a1289371727$$a1289442039$$a1289480943$$a1290019360$$a1294349115$$a1296666644
001443297 020__ $$a9783030777753$$q(electronic bk.)
001443297 020__ $$a3030777758$$q(electronic bk.)
001443297 020__ $$z303077774X
001443297 020__ $$z9783030777746
001443297 0247_ $$a10.1007/978-3-030-77775-3$$2doi
001443297 035__ $$aSP(OCoLC)1289341302
001443297 040__ $$aYDX$$beng$$epn$$cYDX$$dGW5XE$$dEBLCP$$dOCLCO$$dDCT$$dN$T$$dOCLCF$$dDKU$$dOCLCO$$dWAU$$dOCLCQ
001443297 049__ $$aISEA
001443297 050_4 $$aTK7871.95
001443297 08204 $$a621.3815/284$$223
001443297 1001_ $$aJenkins, Keith A.,$$eauthor.
001443297 24510 $$aRF and time-domain techniques for evaluating novel semiconductor transistors /$$cKeith A. Jenkins.
001443297 260__ $$aCham, Switzerland :$$bSpringer,$$c2022.
001443297 300__ $$a1 online resource (xi, 168 pages) :$$bcolor illustrations.
001443297 336__ $$atext$$btxt$$2rdacontent
001443297 337__ $$acomputer$$bc$$2rdamedia
001443297 338__ $$aonline resource$$bcr$$2rdacarrier
001443297 347__ $$atext file$$bPDF$$2rda
001443297 504__ $$aIncludes bibliographical references and index.
001443297 5050_ $$aThe novel transistor characterization challenge -- High-frequency test equipment, connections, and contact with transistors -- Measurement of the frequency response of transistors -- Case studies in the evaluation of novel transistors -- Measurement of the AC linearity of transistors -- Measurement of the large-signal propagation delay of single transistors -- Measurement of the transient response of transistors.
001443297 506__ $$aAccess limited to authorized users.
001443297 520__ $$aThis book presents a variety of techniques using high-frequency (RF) and time-domain measurements to understand the electrical performance of novel, modern transistors made of materials such as graphene, carbon nanotubes, and silicon-on-insulator, and using new transistor structures. The author explains how to use conventional RF and time- domain measurements to characterize the performance of the transistors. In addition, he explains how novel transistors may be subject to effects such as self-heating, period-dependent output, non-linearity, susceptibility to short-term degradation, DC-invisible structural defects, and a different response to DC and transient inputs. Readers will understand that in order to fully understand and characterize the behavior of a novel transistor, there is an arsenal of dynamic techniques available. In addition to abstract concepts, the reader will learn of practical tips required to achieve meaningful measurements, and will understand the relationship between these measurements and traditional, conventional DC characteristics.
001443297 588__ $$aOnline resource; title from PDF title page (SpringerLink, viewed January 19, 2022).
001443297 650_0 $$aField-effect transistors.
001443297 650_6 $$aTransistors à effet de champ.
001443297 655_0 $$aElectronic books.
001443297 77608 $$iPrint version:$$z303077774X$$z9783030777746$$w(OCoLC)1249496283
001443297 852__ $$bebk
001443297 85640 $$3Springer Nature$$uhttps://univsouthin.idm.oclc.org/login?url=https://link.springer.com/10.1007/978-3-030-77775-3$$zOnline Access$$91397441.1
001443297 909CO $$ooai:library.usi.edu:1443297$$pGLOBAL_SET
001443297 980__ $$aBIB
001443297 980__ $$aEBOOK
001443297 982__ $$aEbook
001443297 983__ $$aOnline
001443297 994__ $$a92$$bISE