001443570 000__ 03861cam\a2200577Ia\4500
001443570 001__ 1443570
001443570 003__ OCoLC
001443570 005__ 20230310003551.0
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001443570 007__ cr\un\nnnunnun
001443570 008__ 220108s2022\\\\sz\\\\\\ob\\\\001\0\eng\d
001443570 019__ $$a1290814724$$a1290841832$$a1294355926$$a1296665895
001443570 020__ $$a9783030777302$$q(electronic bk.)
001443570 020__ $$a3030777308$$q(electronic bk.)
001443570 020__ $$z9783030777296
001443570 020__ $$z3030777294
001443570 0247_ $$a10.1007/978-3-030-77730-2$$2doi
001443570 035__ $$aSP(OCoLC)1291314772
001443570 040__ $$aEBLCP$$beng$$epn$$cEBLCP$$dGW5XE$$dYDX$$dOCLCO$$dDCT$$dOCLCF$$dDKU$$dOCLCO$$dWAU$$dOCLCQ
001443570 049__ $$aISEA
001443570 050_4 $$aTK7871.95
001443570 08204 $$a621.3815/284$$223
001443570 1001_ $$aKhandelwal, Sourabh.
001443570 24510 $$aAdvanced SPICE model for GaN HEMTs (ASM-HEMT) :$$ba new industry-standard compact model for GaN-based power and RF circuit design /$$cSourabh Khandelwal.
001443570 260__ $$aCham :$$bSpringer,$$c2022.
001443570 300__ $$a1 online resource (xv, 188 pages) :$$billustrations (black and white, some color)
001443570 336__ $$atext$$btxt$$2rdacontent
001443570 337__ $$acomputer$$bc$$2rdamedia
001443570 338__ $$aonline resource$$bcr$$2rdacarrier
001443570 347__ $$atext file$$bPDF$$2rda
001443570 504__ $$aIncludes bibliographical references and index.
001443570 5050_ $$aGallium nitride semiconductor devices -- Compact modeling -- Introduction to ASM-HEMT compact model -- Core formulations in ASM-HEMT model -- Non-ideal effects in device current and their modeling -- Trapping models --Non-ideal effects in GaN capacitances and their modeling -- Gate current model -- Effect of ambient temperature on GaN device -- Noise models -- Parameter extraction in ASM-HEMT model -- Advance simulations with ASM-HEMT model -- Resources for ASM-HEMT model users.
001443570 506__ $$aAccess limited to authorized users.
001443570 520__ $$aThis book discusses in detail the Advanced SPICE Model for GaN HEMTs (ASM-HEMT), a new industry standard model for GaN-based power and RF circuit design. The author describes this new, standard model in detail, covering the different components of the ASM GaN model from fundamental derivations to the implementation in circuit simulation tools. The book also includes a detailed description of parameter extraction steps and model quality tests, which are critically important for effective use of this standard model in circuit simulation and product design. Coverage includes both radio-frequency (RF), and power electronics applications of this model. Practical issues related to measurement data and parameter extraction flow are also discussed, enabling readers easily to adopt this new model for design flow and simulation tools. Describes in detail a new industry standard for GaN-based power and RF circuit design; Includes discussion of practical problems and their solutions in GaN device modeling; Covers both radio-frequency (RF) and power electronics application of GaN technology; Describes modeling of both GaN RF and power devices.
001443570 588__ $$aOnline resource; title from PDF title page (SpringerLink, viewed January 12, 2022).
001443570 650_0 $$aModulation-doped field-effect transistors.
001443570 650_0 $$aSemiconductors.
001443570 650_0 $$aRadio frequency integrated circuits.
001443570 650_0 $$aGallium nitride.
001443570 650_6 $$aTransistors HEMT.
001443570 650_6 $$aSemi-conducteurs.
001443570 650_6 $$aCircuits intégrés à radiofréquence.
001443570 650_6 $$aNitrure de gallium.
001443570 655_0 $$aElectronic books.
001443570 77608 $$iPrint version:$$aKhandelwal, Sourabh$$tAdvanced SPICE Model for GaN HEMTs (ASM-HEMT)$$dCham : Springer International Publishing AG,c2021$$z9783030777296
001443570 852__ $$bebk
001443570 85640 $$3Springer Nature$$uhttps://univsouthin.idm.oclc.org/login?url=https://link.springer.com/10.1007/978-3-030-77730-2$$zOnline Access$$91397441.1
001443570 909CO $$ooai:library.usi.edu:1443570$$pGLOBAL_SET
001443570 980__ $$aBIB
001443570 980__ $$aEBOOK
001443570 982__ $$aEbook
001443570 983__ $$aOnline
001443570 994__ $$a92$$bISE