Advanced SPICE model for GaN HEMTs (ASM-HEMT) : a new industry-standard compact model for GaN-based power and RF circuit design / Sourabh Khandelwal.
2022
TK7871.95
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Title
Advanced SPICE model for GaN HEMTs (ASM-HEMT) : a new industry-standard compact model for GaN-based power and RF circuit design / Sourabh Khandelwal.
Author
ISBN
9783030777302 (electronic bk.)
3030777308 (electronic bk.)
9783030777296
3030777294
3030777308 (electronic bk.)
9783030777296
3030777294
Publication Details
Cham : Springer, 2022.
Language
English
Description
1 online resource (xv, 188 pages) : illustrations (black and white, some color)
Item Number
10.1007/978-3-030-77730-2 doi
Call Number
TK7871.95
Dewey Decimal Classification
621.3815/284
Summary
This book discusses in detail the Advanced SPICE Model for GaN HEMTs (ASM-HEMT), a new industry standard model for GaN-based power and RF circuit design. The author describes this new, standard model in detail, covering the different components of the ASM GaN model from fundamental derivations to the implementation in circuit simulation tools. The book also includes a detailed description of parameter extraction steps and model quality tests, which are critically important for effective use of this standard model in circuit simulation and product design. Coverage includes both radio-frequency (RF), and power electronics applications of this model. Practical issues related to measurement data and parameter extraction flow are also discussed, enabling readers easily to adopt this new model for design flow and simulation tools. Describes in detail a new industry standard for GaN-based power and RF circuit design; Includes discussion of practical problems and their solutions in GaN device modeling; Covers both radio-frequency (RF) and power electronics application of GaN technology; Describes modeling of both GaN RF and power devices.
Bibliography, etc. Note
Includes bibliographical references and index.
Access Note
Access limited to authorized users.
Digital File Characteristics
text file PDF
Source of Description
Online resource; title from PDF title page (SpringerLink, viewed January 12, 2022).
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Table of Contents
Gallium nitride semiconductor devices
Compact modeling
Introduction to ASM-HEMT compact model
Core formulations in ASM-HEMT model
Non-ideal effects in device current and their modeling
Trapping models
Non-ideal effects in GaN capacitances and their modeling
Gate current model
Effect of ambient temperature on GaN device
Noise models
Parameter extraction in ASM-HEMT model
Advance simulations with ASM-HEMT model
Resources for ASM-HEMT model users.
Compact modeling
Introduction to ASM-HEMT compact model
Core formulations in ASM-HEMT model
Non-ideal effects in device current and their modeling
Trapping models
Non-ideal effects in GaN capacitances and their modeling
Gate current model
Effect of ambient temperature on GaN device
Noise models
Parameter extraction in ASM-HEMT model
Advance simulations with ASM-HEMT model
Resources for ASM-HEMT model users.