Defects in self-catalysed III-V nanowires / James A. Gott.
Gott, James A.
2022
TK7874.85
Available Online

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Title Defects in self-catalysed III-V nanowires / James A. Gott.
Author Gott, James A.
ISBN 9783030940621 (electronic bk.)
3030940624 (electronic bk.)
3030940616
9783030940614
DOI https://doi.org/10.1007/978-3-030-94062-1
Publication Details Cham, Switzerland : Springer, 2022.
Language English
Description 1 online resource
Item Number 10.1007/978-3-030-94062-1 doi
Call Number TK7874.85
Dewey Decimal Classification 621.3815
Summary This thesis presents an in-depth exploration of imperfections that can be found in self-catalysed III-V semiconductor nanowires. By utilising advanced electron microscopy techniques, the interface sharpness and defects at the atomic and macroscopic scale are analysed. It is found that a surprising variety and quantity of defect structures can exist in nanowire systems, and that they can in fact host some never-before-seen defect configurations. To probe how these defects are formed, conditions during nanowire growth can be emulated inside the microscope using the latest generation of in-situ heating holder. This allowed the examination of defect formation, dynamics, and removal, revealing that many of the defects can in fact be eliminated. This information is critical for attaining perfect nanowire growth. The author presents annealing strategies to improve crystal quality, and therefore device performance.
Note "Doctoral Thesis accepted by University of Warwick, Coventry, United Kingdom."
Bibliography, etc. Note Includes bibliographical references.
Access Note Access limited to authorized users.
Source of Description Online resource; title from PDF title page (SpringerLink, viewed February 4, 2022).
Series Springer theses, 2190-5061
Available in Other Form Print version: 9783030940614
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Introduction
Methods
Defects in Nanowires
Defect Dynamics in Nanowires
Interfaces in Nanowire Axial Heterostructures
Conclusions and Future Work.

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