Designing topological phase of bismuth halides and controlling Rashba effect in films studied by ARPES / Ryo Noguchi.
Noguchi, Ryo, author.
2022
QC793.3.S6
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Title Designing topological phase of bismuth halides and controlling Rashba effect in films studied by ARPES / Ryo Noguchi.
Author Noguchi, Ryo, author.
ISBN 9789811918742 (electronic bk.)
9811918740 (electronic bk.)
9789811918735
9811918732
DOI https://doi.org/10.1007/978-981-19-1874-2
Published Singapore : Springer, [2022]
Copyright ©2022
Language English
Description 1 online resource : illustrations (chiefly color).
Item Number 10.1007/978-981-19-1874-2 doi
Call Number QC793.3.S6
Dewey Decimal Classification 539.7/25
Summary This book presents the observation and the control of spin-polarized electrons in Rashba thin films and topological insulators, including the first observations of a weak topological insulator (WTI) and a higher-order topological insulator (HOTI) in bismuth halides. It begins with a general review of electronic structures at the solid surface and mentions that an electron spin at a surface is polarized due to the Rashba effect or topological insulator states with strong spin-orbit coupling. Subsequently it describes the experimental techniques used to study these effects, that is, angle-resolved photoemission spectroscopy (ARPES). Further it moves its focus onto the experimental investigations, in which mainly two different systemsnoble metal thin films with the Rashba effects and bismuth halides topological insulatorsare used. The study of the first system discusses the role of wavefunctions in spin-splitting and demonstrates a scaling law for the Rashba effect in quantum well films for the first time. High-resolution spin-resolved ARPES plays a vital role in systematically trace the thickness-evolution of the effect. The study of the latter material is the first experimental demonstration of both a WTI and HOTI state in bismuth iodide and bismuth bromide, respectively. Importantly, nano-ARPES with high spatial resolution is used to confirm the topological surface states on the side surface of the crystal, which is the hallmark of WTIs. The description of the basic and recently-developed ARPES technique with spin-resolution or spatial-resolution, essential in investigating spin-polarized electrons at a crystal surface, makes the book a valuable source for researchers not only in surface physics or topological materials but also in spintronics and other condensed-matter physics.
Note "Doctoral thesis accepted by The University of Tokyo, Kashiwa, Japan."
Bibliography, etc. Note Includes bibliographical references.
Access Note Access limited to authorized users.
Source of Description Online resource; title from PDF title page (SpringerLink, viewed May 9, 2022).
Series Springer theses. 2190-5061
Available in Other Form Print version: 9789811918735
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Introduction
Backgrounds
ARPES
Revealing the Role of Wavefunctions in Rashba-split States
Stacking-dependent Topological Phases in Quasi-1D Bismuth Halides
Summary and Future Outlook. .

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