TY  - GEN
AB  - This thesis provides the first atomic length-scale observation of the structural transformation (referred to as lattice reconstruction) that occurs in moire superlattices of twisted bilayer transition metal dichalcogenides (TMDs) at low ([theta] < 2°) twist angles. Studies using Scanning transmission electron microscopy (STEM) were limited due to the complexity of the (atomically-thin) sample fabrication requirements. This work developed a unique way to selectively cut and re-stack monolayers of TMDs with a controlled rotational twist angle which could then be easily suspended on a TEM grid to meet the needs of the atomically thin sample requirements. The fabrication technique enabled the study of the two common stacking-polytypes including 3R and 2H (using MoS2 and WS2 as the example) as well as their structural evolution with decreasing twist-angle. Also reported is a comprehensive investigation of electronic properties using scanning probe microscopy and electrical transport measurements of the artificially-engineered structures. These and other studies highlight the unique intrinsic properties of TMDs and their potential application in the development of the next generation of optoelectronics.
AU  - Weston, Astrid,
CN  - QC611.8.S86
DO  - 10.1007/978-3-031-12093-0
DO  - doi
ID  - 1450214
KW  - Superlattices as materials.
KW  - Atomic theory.
LK  - https://univsouthin.idm.oclc.org/login?url=https://link.springer.com/10.1007/978-3-031-12093-0
N1  - "Doctoral thesis accepted by University of Manchester, Manchester, United Kingdom."
N2  - This thesis provides the first atomic length-scale observation of the structural transformation (referred to as lattice reconstruction) that occurs in moire superlattices of twisted bilayer transition metal dichalcogenides (TMDs) at low ([theta] < 2°) twist angles. Studies using Scanning transmission electron microscopy (STEM) were limited due to the complexity of the (atomically-thin) sample fabrication requirements. This work developed a unique way to selectively cut and re-stack monolayers of TMDs with a controlled rotational twist angle which could then be easily suspended on a TEM grid to meet the needs of the atomically thin sample requirements. The fabrication technique enabled the study of the two common stacking-polytypes including 3R and 2H (using MoS2 and WS2 as the example) as well as their structural evolution with decreasing twist-angle. Also reported is a comprehensive investigation of electronic properties using scanning probe microscopy and electrical transport measurements of the artificially-engineered structures. These and other studies highlight the unique intrinsic properties of TMDs and their potential application in the development of the next generation of optoelectronics.
SN  - 9783031120930
SN  - 3031120930
T1  - Atomic and electronic properties of 2D moiré interfaces /
TI  - Atomic and electronic properties of 2D moiré interfaces /
UR  - https://univsouthin.idm.oclc.org/login?url=https://link.springer.com/10.1007/978-3-031-12093-0
ER  -