001451064 000__ 03316cam\a2200553\i\4500 001451064 001__ 1451064 001451064 003__ OCoLC 001451064 005__ 20230310004641.0 001451064 006__ m\\\\\o\\d\\\\\\\\ 001451064 007__ cr\cn\nnnunnun 001451064 008__ 221110s2022\\\\si\a\\\\ob\\\\000\0\eng\d 001451064 019__ $$a1350688410 001451064 020__ $$a9789811968723$$q(electronic bk.) 001451064 020__ $$a9811968721$$q(electronic bk.) 001451064 020__ $$z9789811968716 001451064 020__ $$z9811968713 001451064 0247_ $$a10.1007/978-981-19-6872-3$$2doi 001451064 035__ $$aSP(OCoLC)1350552367 001451064 040__ $$aYDX$$beng$$erda$$epn$$cYDX$$dGW5XE$$dEBLCP$$dOCLCF$$dUKAHL$$dOCLCQ$$dN$T 001451064 049__ $$aISEA 001451064 050_4 $$aTA418.9.T45 001451064 08204 $$a621.3815/2$$223/eng/20221201 001451064 1001_ $$aTerakawa, Shigemi,$$eauthor. 001451064 24510 $$aStructure and electronic properties of ultrathin In films on Si(111) /$$cShigemi Terakawa. 001451064 264_1 $$aSingapore :$$bSpringer,$$c[2022] 001451064 264_4 $$c©2022 001451064 300__ $$a1 online resource (xiv, 76 pages) :$$billustrations (chiefly color). 001451064 336__ $$atext$$btxt$$2rdacontent 001451064 337__ $$acomputer$$bc$$2rdamedia 001451064 338__ $$aonline resource$$bcr$$2rdacarrier 001451064 4901_ $$aSpringer theses,$$x2190-5061 001451064 500__ $$a"Doctoral thesis accepted by Kyoto University, Kyoto, Japan." 001451064 504__ $$aIncludes bibliographical references. 001451064 5050_ $$a1. Introduction -- 2. Experimental methods -- 3. Structure and electronic properties of In single-layer metal on Si(111) -- 4. Structure and electronic properties of ultrathin (In, Mg) films on Si(111) -- 5. Summary. 001451064 506__ $$aAccess limited to authorized users. 001451064 520__ $$aThis book reports the establishment of a single-atomic layer metal of In and a novel (In, Mg) ultrathin film on Si(111) surfaces. A double-layer phase of In called "rect" has been extensively investigated as a two-dimensional metal. Another crystalline phase called "hex" was also suggested, but it had not been established due to difficulty in preparing the sample. The author succeeded in growing the large and high-quality sample of the hex phase and revealed that it is a single-layer metal. The author also established a new triple-atomic layer (In, Mg) film with a nearly freestanding character by Mg deposition onto the In double layer. This work proposes a novel method to decouple ultrathin metal films from Si dangling bonds. The present study demonstrates interesting properties of indium itself, which is a p-block metal both with metallicity and covalency. In this book, readers also see principles of various surface analysis techniques and learn how to use them and analyze the results in the real systems. This book is useful to researchers and students interested in surface science, particularly ultrathin metal films on semiconductor surfaces. 001451064 588__ $$aOnline resource; title from PDF title page (SpringerLink, viewed December 1, 2022). 001451064 650_0 $$aMetallic films. 001451064 650_0 $$aSemiconductor films. 001451064 650_0 $$aIndium. 001451064 655_0 $$aElectronic books. 001451064 77608 $$iPrint version:$$z9811968713$$z9789811968716$$w(OCoLC)1342620887 001451064 830_0 $$aSpringer theses.$$x2190-5061 001451064 852__ $$bebk 001451064 85640 $$3Springer Nature$$uhttps://univsouthin.idm.oclc.org/login?url=https://link.springer.com/10.1007/978-981-19-6872-3$$zOnline Access$$91397441.1 001451064 909CO $$ooai:library.usi.edu:1451064$$pGLOBAL_SET 001451064 980__ $$aBIB 001451064 980__ $$aEBOOK 001451064 982__ $$aEbook 001451064 983__ $$aOnline 001451064 994__ $$a92$$bISE