@article{1451532,
      author = {Bera, Subhash Chandra.},
      url = {http://library.usi.edu/record/1451532},
      title = {Microwave high power high efficiency GaN amplifiers for  communication /},
      publisher = {Springer,},
      abstract = {The textbook discusses design and analysis of microwave  high power and high efficiency amplifiers for  communications, appropriate for undergraduate,  post-graduate students, practical circuit designers and  researchers in the field of electronics and communication  engineering. This book covers basics of III-V group  semiconductor materials and GaAs and GaN based High  Electron Mobility Transistors (HEMTs) most suitable for  microwave and mm wave power amplifiers required for present  wireless communication systems and upcoming 4G and 5G  mobile base stations. The book describes design and  analysis of classical class of amplifier operations such as  Class-A, B, AB, C and F. The coverage extends to advanced  classes of amplifier operation such as extended continuous  Class-B/Class-J, and extended continuous Class-F operations  for broadband, high power and high efficiency performance.  Analytical expressions are derived for circuit elements and  performance parameters for clear understanding and required  for practical design of power amplifiers. Each topic is  supplemented with suitable schematic diagrams, analytical  expressions and plotted results for clear understanding.},
      doi = {https://doi.org/10.1007/978-981-19-6266-0},
      recid = {1451532},
      pages = {1 online resource},
      address = {Singapore :},
      year = {2022},
}