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001451532 001__ 1451532
001451532 003__ OCoLC
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001451532 019__ $$a1352967744$$a1354207299
001451532 020__ $$a9789811962660$$q(electronic bk.)
001451532 020__ $$a9811962669$$q(electronic bk.)
001451532 020__ $$z9811962650
001451532 020__ $$z9789811962653
001451532 0247_ $$a10.1007/978-981-19-6266-0$$2doi
001451532 035__ $$aSP(OCoLC)1352413732
001451532 040__ $$aYDX$$beng$$cYDX$$dEBLCP$$dGW5XE$$dOCLCF$$dUKAHL$$dOCLCQ
001451532 049__ $$aISEA
001451532 050_4 $$aTK7871.2
001451532 08204 $$a621.381535$$223/eng/20221212
001451532 1001_ $$aBera, Subhash Chandra.
001451532 24510 $$aMicrowave high power high efficiency GaN amplifiers for communication /$$cSubhash Chandra Bera.
001451532 260__ $$aSingapore :$$bSpringer,$$c2022.
001451532 300__ $$a1 online resource
001451532 4901_ $$aLecture Notes in Electrical Engineering  ;$$vv. 955
001451532 504__ $$aIncludes bibliographical references and index.
001451532 5050_ $$aIntro -- Foreword -- Preface -- Contents -- About the Author -- 1 Introduction -- 1.1 GaN Semiconductor -- 1.2 GaN Amplifiers -- 1.3 Class of Power Amplifiers -- 1.4 Output Power and Efficiency of Power Amplifiers -- 1.5 Book Outline -- References -- 2 GaN Semiconductor -- 2.1 Introduction -- 2.2 GaN Semiconductor -- 2.3 Sheet Carrier Density in GaN Heterostructure -- References -- 3 Microwave GaN Transistors -- 3.1 Introduction -- 3.2 AlGaN/GaN HEMT -- 3.3 InAlN/GaN HEMT -- 3.4 High Power GaN HEMTs -- 3.5 Characteristic and Equivalent Circuit of GaN HEMTs -- References
001451532 5058_ $$a4 Microwave High Power Amplifiers -- 4.1 Introduction -- 4.2 Design of Linear High Power Amplifier -- 4.2.1 Load Matching Condition for Power Amplifier Design -- 4.2.2 Load Line Concept in Power Amplifier Design -- 4.3 Load Pull Measurement and Constant Power Contours -- 4.4 Power Contours with De-embedding of Elements -- 4.5 Power Contours for Nonlinear Power Amplifiers -- 4.6 Stability of Power Amplifiers -- 4.7 Bias Network of High Power Amplifiers -- References -- 5 Class-A High Power Amplifiers -- 5.1 Introduction -- 5.2 Linear Power Amplifier -- 5.3 Broadband Class-A Linear Power Amplifier
001451532 5058_ $$a5.4 Overdriven Class-A Power Amplifiers -- References -- 6 Class-B High Power Amplifiers -- 6.1 Introduction -- 6.2 Class-B High Power Amplifier with Resistive Load -- 6.3 Class-B High Power Amplifier with Tuned Load -- 6.4 Efficiency Under Power Back-Off Operation -- 6.5 Overdriven Class-B Power Amplifiers -- References -- 7 Class-F High Power Amplifiers -- 7.1 Introduction -- 7.2 Maximum RF Output Power and Efficiency -- 7.3 Output Matching Elements -- 7.3.1 Load Impedance for Fundamental Frequency -- 7.3.2 Load Impedances for Harmonic Frequencies
001451532 5058_ $$a7.4 Broadband Performance of Class-F Amplifier -- 7.5 Continuous Class-F Amplifiers -- 7.6 Extended Continuous Class-F Amplifiers -- 7.6.1 Load Impedance of Fundamental Frequency -- 7.6.2 Load Impedance of 2nd Harmonic Frequency -- 7.6.3 Load Impedance of 3rd Harmonic Frequency -- 7.6.4 Load Impedance of 4th Harmonic Frequency -- 7.6.5 RF Output Power of Fundamental Frequency -- 7.6.6 Drain Efficiency -- References -- 8 Class-J High Power Amplifiers -- 8.1 Introduction -- 8.2 Class-J Amplifier -- 8.2.1 Output Power and Efficiency of Class-J Amplifier
001451532 5058_ $$a8.2.2 Output Load Impedance of Class-J Amplifier -- 8.3 Extended Class-J Amplifier -- 8.3.1 Output Power and Efficiency of Extended Class-J Amplifier -- 8.3.2 Output Impedances of Extended Class-J Amplifier -- References -- 9 Impedance Matching Techniques -- 9.1 Introduction -- 9.2 Impedance Matching Requirement of Power Amplifiers -- 9.3 Impedance Matching Networks -- 9.3.1 Lumped Elements for Impedance Matching -- 9.3.2 Lumped Element Impedance Matching Networks -- 9.3.3 Transmission Line Elements for Impedance Matching -- 9.3.4 Transmission Line Transformers for Impedance Matching
001451532 506__ $$aAccess limited to authorized users.
001451532 520__ $$aThe textbook discusses design and analysis of microwave high power and high efficiency amplifiers for communications, appropriate for undergraduate, post-graduate students, practical circuit designers and researchers in the field of electronics and communication engineering. This book covers basics of III-V group semiconductor materials and GaAs and GaN based High Electron Mobility Transistors (HEMTs) most suitable for microwave and mm wave power amplifiers required for present wireless communication systems and upcoming 4G and 5G mobile base stations. The book describes design and analysis of classical class of amplifier operations such as Class-A, B, AB, C and F. The coverage extends to advanced classes of amplifier operation such as extended continuous Class-B/Class-J, and extended continuous Class-F operations for broadband, high power and high efficiency performance. Analytical expressions are derived for circuit elements and performance parameters for clear understanding and required for practical design of power amplifiers. Each topic is supplemented with suitable schematic diagrams, analytical expressions and plotted results for clear understanding.
001451532 588__ $$aOnline resource; title from PDF title page (SpringerLink, viewed December 12, 2022).
001451532 650_0 $$aAmplifiers (Electronics)
001451532 650_0 $$aMicrowave communication systems.
001451532 650_0 $$aGallium nitride.
001451532 650_0 $$aSemiconductors.
001451532 655_0 $$aElectronic books.
001451532 77608 $$iPrint version: $$z9811962650$$z9789811962653$$w(OCoLC)1337855691
001451532 830_0 $$aLecture notes in electrical engineering ;$$vv. 955.
001451532 852__ $$bebk
001451532 85640 $$3Springer Nature$$uhttps://univsouthin.idm.oclc.org/login?url=https://link.springer.com/10.1007/978-981-19-6266-0$$zOnline Access$$91397441.1
001451532 909CO $$ooai:library.usi.edu:1451532$$pGLOBAL_SET
001451532 980__ $$aBIB
001451532 980__ $$aEBOOK
001451532 982__ $$aEbook
001451532 983__ $$aOnline
001451532 994__ $$a92$$bISE