@article{1451780,
      note = {"Doctoral thesis accepted by Cornell University, USA."},
      author = {Chaudhuri, Reet,},
      url = {http://library.usi.edu/record/1451780},
      title = {Integrated electronics on aluminum nitride : materials and  devices /},
      abstract = {This thesis outlines the principles, device physics, and  technological applications of electronics based on the  ultra-wide bandgap semiconductor aluminum nitride. It  discusses the basic principles of electrostatics and  transport properties of polarization-induced  two-dimensional electron and hole channels in semiconductor  heterostructures based on aluminum nitride. It explains the  discovery of high-density two-dimensional hole gases in  undoped heterojunctions, and shows how these high  conductivity n- and p-type channels are used for high  performance nFETs and pFETs, along with wide bandgap RF,  mm-wave, and CMOS applications. The thesis goes on to  discuss how the several material advantages of aluminum  nitride, such as its high thermal conductivity and  piezoelectric coefficient, enable not just high performance  of transistors, but also monolithic integration of passive  elements such as high frequency filters, enabling a new  form factor for integrated RF electronics.},
      doi = {https://doi.org/10.1007/978-3-031-17199-4},
      recid = {1451780},
      pages = {1 online resource (xvi, 255 pages) :},
}