TY  - GEN
N2  - This book tackles the challenges of designing mm-wave circuits in 16nm FinFET, from the elementary transistor level to a measured D-band transmitter. The design of crucial building blocks such as oscillators and power amplifiers are covered through theoretical limitations, design methodology and measurement. Offers first book on design of mm-wave circuits above 100GHz in an advanced 16nm FinFET digital technology; Covers fundamentals of transistor layout, circuit implementation and measurements; Provides single-source reference to information otherwise only available in disparate literature.
DO  - 10.1007/978-3-031-11224-9
DO  - doi
AB  - This book tackles the challenges of designing mm-wave circuits in 16nm FinFET, from the elementary transistor level to a measured D-band transmitter. The design of crucial building blocks such as oscillators and power amplifiers are covered through theoretical limitations, design methodology and measurement. Offers first book on design of mm-wave circuits above 100GHz in an advanced 16nm FinFET digital technology; Covers fundamentals of transistor layout, circuit implementation and measurements; Provides single-source reference to information otherwise only available in disparate literature.
T1  - Mm-wave circuit design in 16nm FinFET for 6G applications /
AU  - Philippe, Bart,
AU  - Reynaert, Patrick,
CN  - TK7876.5
ID  - 1453005
KW  - Millimeter wave devices.
KW  - Metal oxide semiconductors, Complementary.
SN  - 9783031112249
SN  - 3031112245
TI  - Mm-wave circuit design in 16nm FinFET for 6G applications /
LK  - https://univsouthin.idm.oclc.org/login?url=https://link.springer.com/10.1007/978-3-031-11224-9
UR  - https://univsouthin.idm.oclc.org/login?url=https://link.springer.com/10.1007/978-3-031-11224-9
ER  -