001459693 000__ 01717nam\a2200445\i\4500 001459693 001__ 1459693 001459693 003__ MiAaPQ 001459693 005__ 20230330003805.0 001459693 006__ m\\\\\o\\d\\\\\\\\ 001459693 007__ cr\cn\nnnunnun 001459693 008__ 201222s2016\\\\ja\\\\\\o\\\\\000\0\eng\d 001459693 020__ $$z9784431557999 001459693 020__ $$a9784431558002 (e-book) 001459693 035__ $$a(MiAaPQ)EBC6302873 001459693 035__ $$a(Au-PeEL)EBL6302873 001459693 035__ $$a(OCoLC)1066192451 001459693 040__ $$aMiAaPQ$$beng$$erda$$epn$$cMiAaPQ$$dMiAaPQ 001459693 050_4 $$aQD181.S6$$b.D444 2016 001459693 0820_ $$a546.683$$223 001459693 24500 $$aDefects and impurities in silicon materials :$$ban introduction to atomic-level silicon engineering /$$cYutaka Yoshida, Guido Langouche, editors. 001459693 264_1 $$aTokyo :$$bSpringer,$$c[2016] 001459693 264_4 $$c2016 001459693 300__ $$a1 online resource (498 pages). 001459693 336__ $$atext$$btxt$$2rdacontent 001459693 337__ $$acomputer$$bc$$2rdamedia 001459693 338__ $$aonline resource$$bcr$$2rdacarrier 001459693 4901_ $$aLecture notes in physics ;$$vVolume 916 001459693 506__ $$aAccess limited to authorized users. 001459693 588__ $$aDescription based on print version record. 001459693 650_0 $$aSilicon. 001459693 655_0 $$aElectronic books 001459693 7001_ $$aYoshida, Yutaka,$$eeditor. 001459693 7001_ $$aLangouche, Guido,$$eeditor. 001459693 77608 $$iPrint version:$$tDefects and impurities in silicon materials : an introduction to atomic-level silicon engineering.$$dTokyo : Springer, c2016 $$z9784431557999 001459693 830_0 $$aLecture notes in physics ;$$vVolume 916. 001459693 852__ $$bebk 001459693 85640 $$3ProQuest Ebook Central Academic Complete $$uhttps://univsouthin.idm.oclc.org/login?url=https://ebookcentral.proquest.com/lib/usiricelib-ebooks/detail.action?docID=6302873$$zOnline Access 001459693 909CO $$ooai:library.usi.edu:1459693$$pGLOBAL_SET 001459693 980__ $$aBIB 001459693 980__ $$aEBOOK 001459693 982__ $$aEbook 001459693 983__ $$aOnline