TY  - GEN
AB  - This book discusses the evolution of multigate transistors, the design challenges of transistors for high-frequency applications, and the design and modeling of multigate transistors for high-frequency applications. The contents particularly focus on the cut-off frequency and maximum oscillation frequency of different multigate structures. RF stability modeling for multigate transistors is presented, which can help to understand the relation between the small-signal parameter and the physical parameter of the device for optimization. This is a useful reference to those in academia and industry.
AU  - Sivasankaran, K.
AU  - Mallick, Partha Sharathi.
CN  - TK7871.99.M44
CY  - Singapore :
DA  - 2023.
DO  - 10.1007/978-981-99-0157-9
DO  - doi
ID  - 1461966
KW  - Metal oxide semiconductor field-effect transistors.
LK  - https://univsouthin.idm.oclc.org/login?url=https://link.springer.com/10.1007/978-981-99-0157-9
N2  - This book discusses the evolution of multigate transistors, the design challenges of transistors for high-frequency applications, and the design and modeling of multigate transistors for high-frequency applications. The contents particularly focus on the cut-off frequency and maximum oscillation frequency of different multigate structures. RF stability modeling for multigate transistors is presented, which can help to understand the relation between the small-signal parameter and the physical parameter of the device for optimization. This is a useful reference to those in academia and industry.
PB  - Springer,
PP  - Singapore :
PY  - 2023.
SN  - 9789819901579
SN  - 981990157X
T1  - Multigate transistors for high frequency applications /
TI  - Multigate transistors for high frequency applications /
UR  - https://univsouthin.idm.oclc.org/login?url=https://link.springer.com/10.1007/978-981-99-0157-9
ER  -