@article{1467961,
      recid = {1467961},
      author = {Gimenez, Salvador Pinillos, and Galembeck, Egon Henrique  Salerno,},
      title = {Differentiated layout styles for MOSFETs : electrical  behavior in harsh environments /},
      pages = {1 online resource (230 pages) :},
      abstract = {This book describes in detail the semiconductor physics  and the effects of the high temperatures and ionizing  radiations in the electrical behavior of the  Metal-OxideSemiconductor Field Effect Transistors  (MOSFETs), implemented with the first and second  generations of the differentiated layout styles. The  authors demonstrate a variety of innovative layout styles  for MOSFETs, enabling readers to design analog and RF  MOSFETs that operate in a high-temperature wide range and  an ionizing radiation environment with high electrical  performance and reduced die area. Enables improved  electrical performance, frequency response, energy  efficiency, and die area usage of analog and RF CMOS ICs;  Describes innovative layout styles for MOSFETs that dont  entail an additional cost in manufacturing; Discusses the  design of analog and RF MOSFETs that operate effectively in  a high-temperature wide range and an ionizing radiation  environment.},
      url = {http://library.usi.edu/record/1467961},
      doi = {https://doi.org/10.1007/978-3-031-29086-2},
}