TY  - GEN
AB  - This book describes in detail the semiconductor physics and the effects of the high temperatures and ionizing radiations in the electrical behavior of the Metal-OxideSemiconductor Field Effect Transistors (MOSFETs), implemented with the first and second generations of the differentiated layout styles. The authors demonstrate a variety of innovative layout styles for MOSFETs, enabling readers to design analog and RF MOSFETs that operate in a high-temperature wide range and an ionizing radiation environment with high electrical performance and reduced die area. Enables improved electrical performance, frequency response, energy efficiency, and die area usage of analog and RF CMOS ICs; Describes innovative layout styles for MOSFETs that dont entail an additional cost in manufacturing; Discusses the design of analog and RF MOSFETs that operate effectively in a high-temperature wide range and an ionizing radiation environment.
AU  - Gimenez, Salvador Pinillos,
AU  - Galembeck, Egon Henrique Salerno,
CN  - TK7871.95
DO  - 10.1007/978-3-031-29086-2
DO  - doi
ID  - 1467961
KW  - Metal oxide semiconductor field-effect transistors.
LK  - https://univsouthin.idm.oclc.org/login?url=https://link.springer.com/10.1007/978-3-031-29086-2
N2  - This book describes in detail the semiconductor physics and the effects of the high temperatures and ionizing radiations in the electrical behavior of the Metal-OxideSemiconductor Field Effect Transistors (MOSFETs), implemented with the first and second generations of the differentiated layout styles. The authors demonstrate a variety of innovative layout styles for MOSFETs, enabling readers to design analog and RF MOSFETs that operate in a high-temperature wide range and an ionizing radiation environment with high electrical performance and reduced die area. Enables improved electrical performance, frequency response, energy efficiency, and die area usage of analog and RF CMOS ICs; Describes innovative layout styles for MOSFETs that dont entail an additional cost in manufacturing; Discusses the design of analog and RF MOSFETs that operate effectively in a high-temperature wide range and an ionizing radiation environment.
SN  - 9783031290862
SN  - 3031290860
T1  - Differentiated layout styles for MOSFETs :electrical behavior in harsh environments /
TI  - Differentiated layout styles for MOSFETs :electrical behavior in harsh environments /
UR  - https://univsouthin.idm.oclc.org/login?url=https://link.springer.com/10.1007/978-3-031-29086-2
ER  -