001467961 000__ 04070cam\\22005897i\4500
001467961 001__ 1467961
001467961 003__ OCoLC
001467961 005__ 20230707003347.0
001467961 006__ m\\\\\o\\d\\\\\\\\
001467961 007__ cr\cn\nnnunnun
001467961 008__ 230516s2023\\\\sz\a\\\\ob\\\\001\0\eng\d
001467961 019__ $$a1378708459$$a1378936111
001467961 020__ $$a9783031290862$$q(electronic bk.)
001467961 020__ $$a3031290860$$q(electronic bk.)
001467961 020__ $$z3031290852
001467961 020__ $$z9783031290855
001467961 0247_ $$a10.1007/978-3-031-29086-2$$2doi
001467961 035__ $$aSP(OCoLC)1379207174
001467961 040__ $$aGW5XE$$beng$$erda$$epn$$cGW5XE$$dYDX$$dEBLCP
001467961 049__ $$aISEA
001467961 050_4 $$aTK7871.95
001467961 08204 $$a621.3815284$$223/eng/20230516
001467961 1001_ $$aGimenez, Salvador Pinillos,$$d1962-$$eauthor.
001467961 24510 $$aDifferentiated layout styles for MOSFETs :$$belectrical behavior in harsh environments /$$cSalvador Pinillos Gimenez, Egon Henrique Salerno Galembeck.
001467961 264_1 $$aCham, Switzerland :$$bSpringer,$$c2023.
001467961 300__ $$a1 online resource (230 pages) :$$billustrations (black and white, and colour).
001467961 336__ $$atext$$btxt$$2rdacontent
001467961 337__ $$acomputer$$bc$$2rdamedia
001467961 338__ $$aonline resource$$bcr$$2rdacarrier
001467961 504__ $$aIncludes bibliographical references and index.
001467961 5050_ $$aChapter 1. Introduction -- Chapter 2. Basic concepts of the semiconductor physics -- Chapter 3. The electrical characteristics of the semiconductor at high temperatures -- Chapter 4. The MOSFET -- Chapter 5. The First Generation of the Unconventional Layout Styles for MOSFETs -- Chapter 6. The Ionizing Radiations Effects in Electrical Parameters and Figures of Merit of MOSFETs -- Chapter 7. The Ionizing Radiations Effects in Electrical Parameters and Figures of Merit of MOSFETs -- Chapter 8. The High Temperature Effects in Electrical Parameters of Mosfets and the Results Obtained of the First and Second Generation.
001467961 506__ $$aAccess limited to authorized users.
001467961 520__ $$aThis book describes in detail the semiconductor physics and the effects of the high temperatures and ionizing radiations in the electrical behavior of the Metal-OxideSemiconductor Field Effect Transistors (MOSFETs), implemented with the first and second generations of the differentiated layout styles. The authors demonstrate a variety of innovative layout styles for MOSFETs, enabling readers to design analog and RF MOSFETs that operate in a high-temperature wide range and an ionizing radiation environment with high electrical performance and reduced die area. Enables improved electrical performance, frequency response, energy efficiency, and die area usage of analog and RF CMOS ICs; Describes innovative layout styles for MOSFETs that dont entail an additional cost in manufacturing; Discusses the design of analog and RF MOSFETs that operate effectively in a high-temperature wide range and an ionizing radiation environment.
001467961 588__ $$aDescription based on print version record.
001467961 650_0 $$aMetal oxide semiconductor field-effect transistors.
001467961 655_0 $$aElectronic books.
001467961 7001_ $$aGalembeck, Egon Henrique Salerno,$$eauthor.
001467961 77608 $$iPrint version:$$aGIMENEZ, SALVADOR PINILLOS. GALEMBECK, EGON HENRIQUE SALERNO.$$tDIFFERENTIATED LAYOUT STYLES FOR MOSFETS.$$d[Place of publication not identified] : SPRINGER INTERNATIONAL PU, 2023$$z3031290852$$w(OCoLC)1371140021
001467961 852__ $$bebk
001467961 85640 $$3Springer Nature$$uhttps://univsouthin.idm.oclc.org/login?url=https://link.springer.com/10.1007/978-3-031-29086-2$$zOnline Access$$91397441.1
001467961 909CO $$ooai:library.usi.edu:1467961$$pGLOBAL_SET
001467961 980__ $$aBIB
001467961 980__ $$aEBOOK
001467961 982__ $$aEbook
001467961 983__ $$aOnline
001467961 994__ $$a92$$bISE