001469483 000__ 06357cam\\2200661\i\4500 001469483 001__ 1469483 001469483 003__ OCoLC 001469483 005__ 20230803003332.0 001469483 006__ m\\\\\o\\d\\\\\\\\ 001469483 007__ cr\un\nnnunnun 001469483 008__ 230609s2023\\\\si\a\\\\ob\\\\001\0\eng\d 001469483 019__ $$a1381709868 001469483 020__ $$a9789811998683$$q(electronic bk.) 001469483 020__ $$a981199868X$$q(electronic bk.) 001469483 020__ $$z9811998671 001469483 020__ $$z9789811998676 001469483 0247_ $$a10.1007/978-981-19-9868-3$$2doi 001469483 035__ $$aSP(OCoLC)1381445292 001469483 040__ $$aYDX$$beng$$erda$$cYDX$$dGW5XE$$dEBLCP$$dOCLCF 001469483 049__ $$aISEA 001469483 050_4 $$aTK7881.15 001469483 08204 $$a621.381$$223/eng/20230619 001469483 1001_ $$aLitovski, Vančo,$$eauthor. 001469483 24510 $$aLecture notes in analog electronics :$$blow voltage electronic components, including diodes, transistors, optoelectronic and magnetoelectronic devices, and semiconductor technology /$$cVančo Litovski. 001469483 264_1 $$aSingapore :$$bSpringer,$$c[2023] 001469483 264_4 $$c©2023 001469483 300__ $$a1 online resource (xv, 424 pages) :$$billustrations (some color). 001469483 336__ $$atext$$btxt$$2rdacontent 001469483 337__ $$acomputer$$bc$$2rdamedia 001469483 338__ $$aonline resource$$bcr$$2rdacarrier 001469483 4901_ $$aLecture notes in electrical engineering ;$$vvolume 1002 001469483 504__ $$aIncludes bibliographical references and index. 001469483 5050_ $$aIntro -- Preface -- Introduction to the Lecture Notes of Analogue Electronics (LNAE) SERIES -- Contents -- About the Author -- 1.1 Introduction -- 1.2 Electric Current in Semiconductors -- 1.2.1 Electronic Structure of the Isolated Atom -- 1.2.2 Electronic Structure of the System of Atoms -- 1.2.3 Electric Current in Semiconductors -- 1.2.3.1 P- and N-Type Semiconductors -- 1.2.3.2 Concentration of Free Carriers -- 1.2.3.3 The Fermi Level in a Semiconductor -- 1.2.3.4 The Drift Current -- 1.2.3.5 The Diffusion Current -- 1.2.3.6 The Continuity Equation -- 1.3 The p-n Junction and the Diode 001469483 5058_ $$a1.3.1 The p-n Junction -- 1.3.2 Semiconductor Diodes -- 1.3.2.1 Characteristic of the Diode -- 1.3.2.2 Parameters of the Diode -- 1.3.2.3 Temperature Dependence of the Diode Characteristic -- 1.3.2.4 Limitations in the Use of the Diode -- 1.3.2.5 Capacitances of the Diode -- 1.3.2.6 Summary of the Diode Ratings -- 1.3.2.7 Varicap Diode -- 1.3.2.8 Tunnel Diode -- 1.3.2.9 Zener Diode -- 1.4 Bipolar Transistor-BJT -- 1.4.1 Introduction -- 1.4.2 Transistor Effect -- 1.4.3 BJT Currents and Their Components -- 1.4.4 Model of the BJT -- 1.4.5 Characteristics of BJT -- 1.4.6 The Current Gain Coefficient 001469483 5058_ $$a1.4.7 Properties of the BJT at High Frequencies -- 1.4.8 Characteristics of BJT in Common-Emitter Configuration -- 1.4.9 Safe Operating Area of the BJT -- 1.4.9.1 Maximum Dissipated Power -- 1.4.9.2 Current Limitations -- 1.4.9.3 Minimum Voltage Between Collector and Emitter -- 1.4.9.4 Maximum Collector Voltage -- 1.4.9.5 Secondary Breakdown -- 1.4.9.6 The Complete Active Working Area -- 1.4.10 Drift Transistors -- 1.5 Junction Field Effect Transistor-JFET -- 1.5.1 Introduction -- 1.5.2 Characteristics of a JFET -- 1.5.2.1 Model of the JFET -- 1.5.3 Parameters of the JFET 001469483 5058_ $$a1.5.4 Active Operating Area of the JFET -- 1.5.5 JFET at High Frequencies -- 1.5.6 JFET as a Voltage-Controlled Resistor -- 1.5.7 Constant Current Diode -- 1.6 Insulated Gate Field-Effect Transistors-IGFET -- 1.6.1 MOS Structure -- 1.6.1.1 MOS Capacitances -- 1.6.1.2 Threshold Voltage of the MOS Structure -- 1.6.2 MOS Transistor -- 1.6.3 Modeling the MOSFET -- 1.6.3.1 Models of Short-Channel MOS Transistors -- 1.6.3.2 MOSFET Model in the Subthreshold Region -- 1.6.4 Parameters of the MOSFET -- 1.6.5 Active Operation Area of the MOSFET -- 1.6.6 Capacitances of the MOSFET -- 1.6.7 Dual-Gate MOSFET 001469483 5058_ $$a1.7 MESFET -- 1.7.1 The Device -- 1.7.2 MESFET Model for Large Signals -- 1.7.3 Characteristics of the MESFET -- 1.7.4 Parameters of the MESFET -- 1.7.5 Dynamic Properties of the MESFET -- 1.7.6 Active Operation Area of the MESFET -- 1.7.7 Development of a MESFET -- 1.8 Optoelectronic Components -- 1.8.1 Photodetectors -- 1.8.1.1 Photoresistor -- 1.8.2.1 Photodiode -- 1.8.1.3 Solar Cell -- 1.8.1.4 Other Photodetectors -- 1.8.2 Light Sources -- 1.8.2.1 LED -- 1.8.2.2 Semiconductor LASER Diode -- 1.8.3 Optocouplers -- 1.9 Magnetoelectronic Components -- 1.9.1 Introduction -- 1.9.2 Hall Generators 001469483 506__ $$aAccess limited to authorized users. 001469483 520__ $$aThe book opens a magic miniature world of electronics to the reader. The book addresses what small means in terms of electronics and what clean means in terms of modern electronic technology. Consequently, the reader understands why the most advanced civilization of the ancient world the Egyptians was not capable to do electronics. The book also discusses functionalities of the low-voltage electronic components with the aim to implement them in electronic circuit design. At the same time, it also opens the space of electronic component design to the readers be it discrete or integrated. The book has an introduction section, 11 chapters, an appendix, index, and list of literature. Appendix A discusses a set of solved problems, Appendix B presents SPICE simulation examples, and Appendix C presents component numbering in marketing environment. 001469483 588__ $$aOnline resource; title from PDF title page (SpringerLink, viewed June 19, 2023). 001469483 650_0 $$aLow voltage systems. 001469483 655_0 $$aElectronic books. 001469483 77608 $$iPrint version: $$z9811998671$$z9789811998676$$w(OCoLC)1360307867 001469483 830_0 $$aLecture notes in electrical engineering ;$$vv. 1002. 001469483 852__ $$bebk 001469483 85640 $$3Springer Nature$$uhttps://univsouthin.idm.oclc.org/login?url=https://link.springer.com/10.1007/978-981-19-9868-3$$zOnline Access$$91397441.1 001469483 909CO $$ooai:library.usi.edu:1469483$$pGLOBAL_SET 001469483 980__ $$aBIB 001469483 980__ $$aEBOOK 001469483 982__ $$aEbook 001469483 983__ $$aOnline 001469483 994__ $$a92$$bISE