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Intro
Introduction
Contents
About the Author
Abbreviations
1 Physical Foundations for the Formation of Magnetic Nanostructures
1.1 The Phenomenon of Giant Magnetoresistance
1.2 GMR Theory
1.3 Tunnel Magnetoresistance
1.4 Spin-Polarized Current
1.5 MRAM (Magnetoresistive Random Access Memory)
1.6 Superparamagnetic Limit
References
2 Frustrations of Exchange Interaction
2.1 Why Does Spin Feel Hopeless?
2.2 Frustrations in a System with a Non-magnetic Layer
2.3 Frustrations in the Ferromagnet-Antiferromagnet System

4.4 Phase Diagram
4.5 Experimental Results
References
5 Compensated Slice
5.1 Spin-flop Orientation
5.2 The Case of "Charged" Edges of Atomic Steps at the Interface "Ferromagnet-Antiferromagnet"
5.2.1 Case of Weak Roughness
5.2.2 A Case of Strong Roughness. Thick Layer
5.2.3 A Case of Strong Roughness. Thin Layer
References
6 Behavior in a Magnetic Field
6.1 Exchange Bias. Uncompensated Slice
6.2 Exchange Bias. Compensated Slice
6.3 A Substrate of Finite Thickness. "Switching" the Nanodomain State
6.3.1 The Area of Strong Fields

7.5 Behavior of a Spin-Valve Structure in a Magnetic Field in the Region of Applicability of the Exchange Approximation
7.6 Comparison with the Experiment. Magnetic Phase Diagram of a Spin-Valve Structure with an Antiferromagnetic Oxide Layer
7.6.1 Phase Diagram
7.6.2 Comparison with the Experiment
References
8 Surface Spin-flop Transition in Antiferromagnet
8.1 Volume Spin-flop Transition
8.2 The Case of an Atomically Smooth Surface
8.3 Size Effects in a Plane-parallel Layer of an Antiferromagnet with Smooth Surfaces
8.3.1 Even Number of Atomic Planes

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