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Table of Contents
Intro
Preface
Editor biography
Ye Zhou
List of contributors
Chapter 1 Introduction to semiconducting metal oxides
1.1 Background
1.2 Fundamentals of semiconducting metal oxide
1.3 Application of semiconducting metal oxide
References
Chapter 2 Fundamentals of metal-oxide thin-film transistors
2.1 Overview of thin-film transistor technology
2.1.1 History and mainstream technologies
2.1.2 Operation mechanism
2.1.3 Device structure
2.1.4 Key static parameters
2.2 Metal oxide semiconductors for thin-film transistors
2.2.1 Binary metal oxide semiconductors
2.2.2 Multicomponent metal oxide semiconductors
2.3 Reliability of metal oxide thin-film transistors
2.3.1 Ambient stress
2.3.2 Gate bias stress
2.3.3 Illumination stress
2.3.4 Thermal stress
2.4 Approaches towards high performance
2.4.1 Active channels
2.4.2 Gate insulators
2.4.3 Gate electrodes
2.4.4 Source/drain regions
2.5 Summary
References
Chapter 3 Preparation of metal oxide thin film by pulsed laser deposition
3.1 Introduction
3.1.1 Preparation of metal oxides by pulsed laser deposition
3.1.2 Apparatus
3.2 Orientation control
3.2.1 Epitaxy
3.2.2 Buffer layer
3.3 Ambient gas
3.3.1 Effect of laser energy density under O2 gas ambient
3.3.2 Effect of N2O gas
3.4 Laser annealing
3.4.1 ZnO thin films
3.4.2 CuCrO2:Mg thin films
3.5 Aurora PLD
3.6 Conclusion
References
Chapter 4 ZnO-based ultraviolet light-emitting materials and devices
4.1 Introduction
4.2 Preparation and properties of ZnO materials
4.3 P-N and P-I-N heterojunction LEDs
4.3.1 Surface/interfacial engineering and modification
4.3.2 Incorporation of localized surface plasmons
4.3.3 Cooperative effect of nanocrystallization and surface plasmons.
4.3.4 Emerging composite heterojunctions
4.4 MIS heterojunction LDs
4.5 Prospects and challenges
References
Chapter 5 Heterojunction oxide thin-film transistors
5.1 Introduction
5.2 Mechanisms and materials for HJ TFTs
5.2.1 2DEG formation
5.2.2 Dual active layers and other mechanisms
5.3 TFTs based on bilayer HJs and multilayer stacks
5.3.1 Overview
5.3.2 Distinct heterojunction layers versus mixed phase oxides
5.3.3 Influence of layer thicknesses
5.3.4 Influence of stacking sequence
5.3.5 Modulation doping
5.4 Improvements in bias stress stability for HJ TFTs
5.5 Conclusions
Acknowledgements
References
Chapter 6 Application of one-dimensional metal oxide semiconductor in field effect transistor
6.1 Introduction
6.2 Preparation of one-dimensional metal oxide materials
6.2.1 Chemical vapor deposition
6.2.2 Sol-gel technique
6.2.3 Electrospinning technology
6.3 Basic principle of one-dimensional metal oxide semiconductor FET
6.4 Individual one-dimensional metal oxide NW transistors
6.4.1 Binary metal oxide NW transistor
6.4.2 Ternary metal oxide NW transistor
6.4.3 Quaternary metal oxide NW transistor
6.4.4 Other metal oxide NF transistors
6.5 Application of one-dimensional metal oxide semiconductor FET
6.5.1 Transparent and flexible electronic devices
6.5.2 Gas sensor devices
6.5.3 Photodetector
6.5.4 Synapse-like devices
6.6 Summary and outlook
References
Chapter 7 Semiconductor metal-oxide thin-film transistors for display
7.1 Introduction
7.1.1 Current status of displays
7.1.2 Active-matrix driving for FPDs
7.1.3 TFT technologies in display
7.1.4 Development trend of MO TFTs in display
7.2 Issues of MO TFTs in display
7.2.1 TFT structures
7.2.2 MO materials
7.3 Circuit design for MO TFTs in display.
7.3.1 Pixel circuits
7.3.2 Driver circuits
7.4 Summary and perspective
References
Chapter 8 Metal oxide transistor for tactile imaging
8.1 Introduction
8.2 Transistor-based tactile sensor with compressible gate electrode
8.3 Piezotronic/piezo-phototronic tactile sensor
8.3.1 Piezotronic effect
8.3.2 Piezotronic transistor as pressure sensor
8.3.3 Piezotronic transistor for tactile imaging
8.4 Tribotronic tactile sensor
8.4.1 Contact electrification
8.4.2 Tribotronic transistor and work mechanism
8.4.3 Tribotronic transistor for tactile imaging
8.5 New trends in tactile imaging: self-powered system
8.6 Summary
References
Chapter 9 Phototransistors based on metal oxide semiconductors
9.1 Introduction
9.2 Performance parameters
9.3 Binary metal oxide semiconductors
9.3.1 ZnO
9.3.2 Other binary metal oxide semiconductors
9.4 Ternary metal oxide semiconductors
9.4.1 Fabrication of ternary metal oxide semiconductors hybrid heterojunction
9.4.2 Phototransistors
9.5 Quaternary oxide semiconductors
9.5.1 Fabrication of quaternary oxide hybrid heterojunction
9.5.2 Phototransistors
9.6 Conclusion and challenges
References
Chapter 10 Semiconductor metal oxide thin film transistor for non-volatile memory
10.1 Overview
10.1.1 Introduction
10.1.2 Classification of floating gate memory
10.1.3 The main technical indicators of floating gate memory
10.2 Silicon-based TFT floating gate memory
10.2.1 SONOS structure
10.2.2 SOHOS structure
10.3 Metal oxide TFT based charge-trap memory
10.3.1 Mechanism of the electrical hysteresis
10.3.2 Metal oxide TFT based floating gate memory
10.3.3 Nanocrystal (quantum dot) charge-trap memory
10.4 Other novel memories
10.4.1 FeRAM
10.4.2 RRAM
10.5 Conclusion and future development
References.
Chapter 11 Semiconductor metal oxide thin-film transistor for artificial synapse
11.1 Introduction
11.2 Machanism and parameters of MOTFT
11.2.1 Structure of MOTFT
11.2.2 The principle of MOTFT
11.2.3 Main device parameters of MOTFT
11.3 Synapse profile
11.3.1 Synaptic structure
11.3.2 Basical characteristics of synapses
11.4 Neural bionic applications of MOTFT
11.4.1 EDL MOTFT
11.4.2 Ferroelectric MOTFT
11.4.3 Photoelectric MOTFT
11.5 Summary and outlook
References
Chapter 12 Semiconducting metal oxide thin film transistors
12.1 Introduction
12.2 Semiconducting InGaZnO (IGZO) thin film transistors
12.2.1 Fundamentals
12.2.2 Device optimization
12.2.3 Display applications
12.3 Semiconducting Ga2O3 thin film transistors
12.3.1 Fundamentals
12.3.2 Channel fabrication
12.3.3 Device performance and applications
12.4 Semiconducting ITO thin film transistors
12.5 Summary
References.
Preface
Editor biography
Ye Zhou
List of contributors
Chapter 1 Introduction to semiconducting metal oxides
1.1 Background
1.2 Fundamentals of semiconducting metal oxide
1.3 Application of semiconducting metal oxide
References
Chapter 2 Fundamentals of metal-oxide thin-film transistors
2.1 Overview of thin-film transistor technology
2.1.1 History and mainstream technologies
2.1.2 Operation mechanism
2.1.3 Device structure
2.1.4 Key static parameters
2.2 Metal oxide semiconductors for thin-film transistors
2.2.1 Binary metal oxide semiconductors
2.2.2 Multicomponent metal oxide semiconductors
2.3 Reliability of metal oxide thin-film transistors
2.3.1 Ambient stress
2.3.2 Gate bias stress
2.3.3 Illumination stress
2.3.4 Thermal stress
2.4 Approaches towards high performance
2.4.1 Active channels
2.4.2 Gate insulators
2.4.3 Gate electrodes
2.4.4 Source/drain regions
2.5 Summary
References
Chapter 3 Preparation of metal oxide thin film by pulsed laser deposition
3.1 Introduction
3.1.1 Preparation of metal oxides by pulsed laser deposition
3.1.2 Apparatus
3.2 Orientation control
3.2.1 Epitaxy
3.2.2 Buffer layer
3.3 Ambient gas
3.3.1 Effect of laser energy density under O2 gas ambient
3.3.2 Effect of N2O gas
3.4 Laser annealing
3.4.1 ZnO thin films
3.4.2 CuCrO2:Mg thin films
3.5 Aurora PLD
3.6 Conclusion
References
Chapter 4 ZnO-based ultraviolet light-emitting materials and devices
4.1 Introduction
4.2 Preparation and properties of ZnO materials
4.3 P-N and P-I-N heterojunction LEDs
4.3.1 Surface/interfacial engineering and modification
4.3.2 Incorporation of localized surface plasmons
4.3.3 Cooperative effect of nanocrystallization and surface plasmons.
4.3.4 Emerging composite heterojunctions
4.4 MIS heterojunction LDs
4.5 Prospects and challenges
References
Chapter 5 Heterojunction oxide thin-film transistors
5.1 Introduction
5.2 Mechanisms and materials for HJ TFTs
5.2.1 2DEG formation
5.2.2 Dual active layers and other mechanisms
5.3 TFTs based on bilayer HJs and multilayer stacks
5.3.1 Overview
5.3.2 Distinct heterojunction layers versus mixed phase oxides
5.3.3 Influence of layer thicknesses
5.3.4 Influence of stacking sequence
5.3.5 Modulation doping
5.4 Improvements in bias stress stability for HJ TFTs
5.5 Conclusions
Acknowledgements
References
Chapter 6 Application of one-dimensional metal oxide semiconductor in field effect transistor
6.1 Introduction
6.2 Preparation of one-dimensional metal oxide materials
6.2.1 Chemical vapor deposition
6.2.2 Sol-gel technique
6.2.3 Electrospinning technology
6.3 Basic principle of one-dimensional metal oxide semiconductor FET
6.4 Individual one-dimensional metal oxide NW transistors
6.4.1 Binary metal oxide NW transistor
6.4.2 Ternary metal oxide NW transistor
6.4.3 Quaternary metal oxide NW transistor
6.4.4 Other metal oxide NF transistors
6.5 Application of one-dimensional metal oxide semiconductor FET
6.5.1 Transparent and flexible electronic devices
6.5.2 Gas sensor devices
6.5.3 Photodetector
6.5.4 Synapse-like devices
6.6 Summary and outlook
References
Chapter 7 Semiconductor metal-oxide thin-film transistors for display
7.1 Introduction
7.1.1 Current status of displays
7.1.2 Active-matrix driving for FPDs
7.1.3 TFT technologies in display
7.1.4 Development trend of MO TFTs in display
7.2 Issues of MO TFTs in display
7.2.1 TFT structures
7.2.2 MO materials
7.3 Circuit design for MO TFTs in display.
7.3.1 Pixel circuits
7.3.2 Driver circuits
7.4 Summary and perspective
References
Chapter 8 Metal oxide transistor for tactile imaging
8.1 Introduction
8.2 Transistor-based tactile sensor with compressible gate electrode
8.3 Piezotronic/piezo-phototronic tactile sensor
8.3.1 Piezotronic effect
8.3.2 Piezotronic transistor as pressure sensor
8.3.3 Piezotronic transistor for tactile imaging
8.4 Tribotronic tactile sensor
8.4.1 Contact electrification
8.4.2 Tribotronic transistor and work mechanism
8.4.3 Tribotronic transistor for tactile imaging
8.5 New trends in tactile imaging: self-powered system
8.6 Summary
References
Chapter 9 Phototransistors based on metal oxide semiconductors
9.1 Introduction
9.2 Performance parameters
9.3 Binary metal oxide semiconductors
9.3.1 ZnO
9.3.2 Other binary metal oxide semiconductors
9.4 Ternary metal oxide semiconductors
9.4.1 Fabrication of ternary metal oxide semiconductors hybrid heterojunction
9.4.2 Phototransistors
9.5 Quaternary oxide semiconductors
9.5.1 Fabrication of quaternary oxide hybrid heterojunction
9.5.2 Phototransistors
9.6 Conclusion and challenges
References
Chapter 10 Semiconductor metal oxide thin film transistor for non-volatile memory
10.1 Overview
10.1.1 Introduction
10.1.2 Classification of floating gate memory
10.1.3 The main technical indicators of floating gate memory
10.2 Silicon-based TFT floating gate memory
10.2.1 SONOS structure
10.2.2 SOHOS structure
10.3 Metal oxide TFT based charge-trap memory
10.3.1 Mechanism of the electrical hysteresis
10.3.2 Metal oxide TFT based floating gate memory
10.3.3 Nanocrystal (quantum dot) charge-trap memory
10.4 Other novel memories
10.4.1 FeRAM
10.4.2 RRAM
10.5 Conclusion and future development
References.
Chapter 11 Semiconductor metal oxide thin-film transistor for artificial synapse
11.1 Introduction
11.2 Machanism and parameters of MOTFT
11.2.1 Structure of MOTFT
11.2.2 The principle of MOTFT
11.2.3 Main device parameters of MOTFT
11.3 Synapse profile
11.3.1 Synaptic structure
11.3.2 Basical characteristics of synapses
11.4 Neural bionic applications of MOTFT
11.4.1 EDL MOTFT
11.4.2 Ferroelectric MOTFT
11.4.3 Photoelectric MOTFT
11.5 Summary and outlook
References
Chapter 12 Semiconducting metal oxide thin film transistors
12.1 Introduction
12.2 Semiconducting InGaZnO (IGZO) thin film transistors
12.2.1 Fundamentals
12.2.2 Device optimization
12.2.3 Display applications
12.3 Semiconducting Ga2O3 thin film transistors
12.3.1 Fundamentals
12.3.2 Channel fabrication
12.3.3 Device performance and applications
12.4 Semiconducting ITO thin film transistors
12.5 Summary
References.