000359156 000__ 01143cam\a2200313Ia\4500 000359156 001__ 359156 000359156 005__ 20210513131105.0 000359156 006__ m\\\\\\\\u\\\\\\\\ 000359156 007__ cr\cn||||||||| 000359156 008__ 050728s2005\\\\si\a\\\\sb\\\\001\0\eng\d 000359156 010__ $$z 2005296210 000359156 020__ $$z9812561218 000359156 035__ $$a(CaPaEBR)ebr10126001 000359156 035__ $$a(OCoLC)647492520 000359156 040__ $$aCaPaEBR$$cCaPaEBR 000359156 05014 $$aTK7871.95$$b.B35 2005eb 000359156 08204 $$a621.3815/284$$222 000359156 1001_ $$aBaliga, B. Jayant,$$d1948- 000359156 24510 $$aSilicon RF power MOSFETS$$h[electronic resource] /$$cB. Jayant Baliga. 000359156 260__ $$aSingapore ;$$aHackensack, NJ :$$bWorld Scientific,$$cc2005. 000359156 300__ $$axvi, 302 p. :$$bill. (some col.) 000359156 504__ $$aIncludes bibliographical references and index. 000359156 506__ $$aAccess limited to authorized users. 000359156 650_0 $$aMetal oxide semiconductor field-effect transistors. 000359156 650_0 $$aField-effect transistors. 000359156 655_7 $$aElectronic books.$$2lcsh 000359156 85280 $$bebk$$hProquest Ebook Central Academic Complete 000359156 85640 $$3ProQuest Ebook Central Academic Complete$$uhttps://univsouthin.idm.oclc.org/login?url=http://site.ebrary.com/lib/usiricelib/Doc?id=10126001$$zOnline Access 000359156 909CO $$ooai:library.usi.edu:359156$$pGLOBAL_SET 000359156 980__ $$aEBOOK 000359156 980__ $$aBIB 000359156 982__ $$aEbook 000359156 983__ $$aOnline