000419567 000__ 01279cam\a2200313\a\4500 000419567 001__ 419567 000419567 005__ 20210513145034.0 000419567 006__ m\\\\\\\\u\\\\\\\\ 000419567 007__ cr\cn||||||||| 000419567 008__ 950905s1995\\\\dcua\\\\sb\\\\000\0\eng\d 000419567 010__ $$z 95070760 000419567 020__ $$z0309053358 000419567 035__ $$a(CaPaEBR)ebr10056927 000419567 035__ $$a(OCoLC)647366888 000419567 040__ $$aCaPaEBR$$cCaPaEBR 000419567 05014 $$aTK7871.85$$b.M3679 1995eb 000419567 24500 $$aMaterials for high-temperature semiconductor devices$$h[electronic resource] /$$cCommittee on Materials for High-Temperature Semiconductor Devices, National Materials Advisory Board, Commission on Engineering and Technical Systems, National Research Council. 000419567 260__ $$aWashington, D.C. :$$bNational Academy Press,$$cc1995. 000419567 300__ $$axv, 119 p. :$$bill. ;$$c28 cm. 000419567 500__ $$a"NMAB-474." 000419567 504__ $$aIncludes bibliographical references. 000419567 506__ $$aAccess limited to authorized users. 000419567 650_0 $$aSemiconductors. 000419567 650_0 $$aMaterials at high temperatures. 000419567 650_0 $$aWide gap semiconductors. 000419567 655_7 $$aElectronic books.$$2lcsh 000419567 852__ $$bebk 000419567 85640 $$3ProQuest Ebook Central Academic Complete$$uhttps://univsouthin.idm.oclc.org/login?url=http://site.ebrary.com/lib/usiricelib/Doc?id=10056927$$zOnline Access 000419567 909CO $$ooai:library.usi.edu:419567$$pGLOBAL_SET 000419567 980__ $$aEBOOK 000419567 980__ $$aBIB 000419567 982__ $$aEbook 000419567 983__ $$aOnline