000460836 000__ 05470cam\a2200421\a\4500
000460836 001__ 460836
000460836 005__ 20210513161644.0
000460836 006__ m\\\\\\\\d\\\\\\\\
000460836 007__ cr\cn|||||||||
000460836 008__ 110630s2011\\\\sz\a\\\\sb\\\\101\0\eng\d
000460836 010__ $$z  2011377587
000460836 020__ $$z3037850515
000460836 020__ $$z9783037850510
000460836 020__ $$z9783038134947 (e-book)
000460836 035__ $$a(CaPaEBR)ebr10604254
000460836 035__ $$a(OCoLC)815479314
000460836 040__ $$aCaPaEBR$$cCaPaEBR
000460836 05014 $$aTK7874.84$$b.I58 2011eb
000460836 08204 $$a621.3815$$223
000460836 1112_ $$aInternational Symposium on Technology Evolution for Silicon Nano-Electronics$$d(2010 :$$cTokyo Institute of Technology)
000460836 24510 $$aTechnology evolution for silicon nano-electronics$$h[electronic resource] :$$bselected, peer reviewed papers from the proceedings of the International Symposium on Technology Evolution for Silicon Nano-Electronics 2010, June 3-5, 2010, Tokyo Institute of Technology, Tokyo, Japan /$$cedited by Seiichi Miyazaki and Hitoshi Tabata.
000460836 24630 $$aProceedings of the International Symposium on Technology Evolution for Silicon Nano-Electronics
000460836 24630 $$aInternational Symposium on Technology Evolution for Silicon Nano-Electronics
000460836 260__ $$aStafa-Zurich, Switzerland ;$$aEnfield, N.H. :$$bTrans Tech Publications,$$cc2011.
000460836 300__ $$axi, 234 p. :$$bill.
000460836 440_0 $$aKey engineering materials,$$x1013-9826 ;$$vv. 470
000460836 504__ $$aIncludes bibliographical references and indexes.
000460836 5050_ $$aHigh Mobility Ge-Based CMOS Device Technologies -- SiGe-Mixing-Triggered Rapid-Melting-Growth of High-Mobility Ge-On-Insulator -- Impact of Self-Heating Effect on the Electrical Characteristics of Nanoscale Devices -- Functional Device Applications of Nanosilicon -- Tunable Single-Electron Turnstile Using Discrete Dopants in Nanoscale SOI-FETs -- KFM Observation of Electron Charging and Discharging in Phosphorus-Doped SOI Channel -- Photoluminescence Characteristics of Ultra-Thin Silicon-on-Insulator at Low Temperatures -- Investigation about I-V Characteristics in a New Electronic Structure Model of the Ohmic Contact for Future Nano-Scale Ohmic Contact -- Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure -- Electronic Structure and Spin-Injection of Co-Based Heusler Alloy/ Semiconductor Junctions -- First-Principles Calculations of the Dielectric Constant for the GeO2 Films -- Nanosize Electronics Material Analysis by Local Quantities Based on the Rigged QED Theory -- Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors -- Effect of Al2O3 Deposition and Subsequent Annealing on Passivation of Defects in Ge-Rich SiGe-on-Insulator  -- Controlled Synthesis of Carbon Nanowalls for Carbon Channel Engineering -- Resistive Memory Utilizing Ferritin Protein with Nano Particle -- Atomically Controlled Plasma Processing for Group IV Quantum Heterostructure Formation -- Nanometer-Scale Characterization Technique for Si Nanoelectric Materials Using Synchrotron Radiation Microdiffraction -- Generation and Growth of Atomic-Scale Roughness at Surface and Interface of Silicon Dioxide Thermally Grown on Atomically Flat Si Surface -- Nano-Surface Modification of Silicon with Ultra-Short Pulse Laser Process -- Evaluation of Strained Silicon by Electron Back Scattering Pattern Compared with Raman Measurement and Edge Force Model Calculation -- Development of New Methods for Fine-Wiring in Si Using a Wet Catalytic Reaction -- Optical Response of Si-Quantum-Dots/NiSi-Nanodots Stack Hybrid Floating Gate in MOS Structures -- Energy Band Engineering of Metal Nanodots for High Performance Nonvolatile Memory Application -- Strained Ge and Ge1-xSnx Technology for Future CMOS Devices -- Improved Electrical Properties and Thermal Stability of GeON Gate Dielectrics Formed by Plasma Nitridation of Ultrathin Oxides on Ge(100) -- Structural Change during the Formation of Directly Bonded Silicon Substrates -- Microscopic Structure of Directly Bonded Silicon Substrates -- Formation of Nanotubes of Carbon by Joule Heating of Carbon-Contaminated Si Nanochains -- Si Nanodot Device Fabricated by Thermal Oxidation and their Applications -- Influences of Carrier Transport on Drain-Current Variability of MOSFETs -- Resistive Switching in NiO Bilayer Films with Different Crystallinity Layers -- Analysis of Threshold Voltage Variations in Fin Field Effect Transistors -- Capture/Emission Processes of Carriers in Heterointerface Traps Observed in the Transient Charge-Pumping Characteristics of SiGe/Si-Hetero-Channel pMOSFETs -- Quasi-Ballistic Transport in Nano-Scale Devices: Boundary Layer, Potential Fluctuation, and Coulomb Interaction -- Effect of Back Bias on Variability in Intrinsic Channel SOI MOSFETs -- Discrete Dopant Effects on Threshold Voltage Variation in Double-Gate and Gate-All-Around Metal-Oxide-Semiconductor Field-Effect-Transistors -- Interconnect Design Challenges in Nano CMOS Circuit.
000460836 506__ $$aAccess limited to authorized users.
000460836 650_0 $$aNanoelectronics$$vCongresses.
000460836 650_0 $$aNanostructured materials$$vCongresses.
000460836 650_0 $$aMetal oxide semiconductors$$vCongresses.
000460836 655_7 $$aElectronic books.$$2lcsh
000460836 7001_ $$aMiyazaki, Seiichi.
000460836 7001_ $$aTabata, Hitoshi.
000460836 852__ $$bebk
000460836 85640 $$3ProQuest Ebook Central Academic Complete$$uhttps://univsouthin.idm.oclc.org/login?url=http://site.ebrary.com/lib/usiricelib/Doc?id=10604254$$zOnline Access
000460836 909CO $$ooai:library.usi.edu:460836$$pGLOBAL_SET
000460836 980__ $$aEBOOK
000460836 980__ $$aBIB
000460836 982__ $$aEbook
000460836 983__ $$aOnline