Design for manufacturability [electronic resource] : from 1D to 4D for 90-22nm technology nodes / Artur Balasinski.
2013
TK7867
Linked e-resources
Linked Resource
Details
Title
Design for manufacturability [electronic resource] : from 1D to 4D for 90-22nm technology nodes / Artur Balasinski.
Author
ISBN
9781461417613 electronic book
1461417619 electronic book
9781461417606
1461417619 electronic book
9781461417606
Published
New York, New York : Springer, [2013?]
Copyright
©2014
Language
English
Description
1 online resource.
Item Number
10.1007/978-1-4614-1761-3 doi
Call Number
TK7867
Dewey Decimal Classification
621.3815
Summary
This book explains integrated circuit design for manufacturability (DfM) at the product level (packaging, applications) and applies engineering DfM principles to the latest standards of product development at 22 nm technology nodes. It is a valuable guide for layout designers, packaging engineers and quality engineers, covering DfM development from 1D to 4D, involving IC design flow setup, best practices, links to manufacturing and product definition, for process technologies down to 22 nm node, and product families including memories, logic, system-on-chip and system-in-package. Provides design for manufacturability guidelines on layout techniques for the most advanced, 22 nm technology nodes; Includes information valuable to layout designers, packaging engineers and quality engineers, working on memories, logic, system-on-chip and system-in-package; Offers a highly-accessible, single-source reference to information otherwise available only from disparate sources; Helps readers to translate reliability methodology into real design flows.
Bibliography, etc. Note
Includes bibliographical references.
Access Note
Access limited to authorized users.
Source of Description
Description based on print version record.
Available in Other Form
Linked Resources
Record Appears in
Table of Contents
Classic DfM: from 2D to 3D
DfM at 28 nm and Beyond
New DfM Domain: Stress Effects
Conclusions and Future Work.
DfM at 28 nm and Beyond
New DfM Domain: Stress Effects
Conclusions and Future Work.