@article{695748,
      recid = {695748},
      author = {Nowozin, Tobias,},
      title = {Self-organized quantum dots for memories electronic  properties and carrier dynamics / [electronic resource] :},
      school = {Ph.D.},
      pages = {1 online resource (xvi, 153 pages) :},
      abstract = {Today's semiconductor memory market is divided between two  types of memory: DRAM and Flash. Each has its own  advantages and disadvantages. While DRAM is fast but  volatile, Flash is non-volatile but slow. A memory system  based on self-organized quantum dots (QDs) as storage node  could combine the advantages of modern DRAM and Flash, thus  merging the latter's non-volatility with very fast write  times. This thesis investigates the electronic properties  of and carrier dynamics in self-organized quantum dots by  means of time-resolved capacitance spectroscopy and  time-resolved current measurements. The first aim is to  study the localization energy of various QD systems in  order to assess the potential of increasing the storage  time in QDs to non-volatility. Surprisingly, it is found  that the major impact of carrier capture cross-sections of  QDs is to influence, and at times counterbalance, carrier  storage in addition to the localization energy. The second  aim is to study the coupling between a layer of  self-organized QDs and a two-dimensional hole gas (2DHG),  which is relevant for the read-out process in memory  systems. The investigation yields the discovery of the  many-particle ground states in the QD ensemble. In addition  to its technological relevance, the thesis also offers new  insights into the fascinating field of nanostructure  physics.},
      url = {http://library.usi.edu/record/695748},
      doi = {https://doi.org/10.1007/978-3-319-01970-3},
}