000695748 000__ 03473cam\a2200469Ki\4500 000695748 001__ 695748 000695748 005__ 20230306135455.0 000695748 006__ m\\\\\o\\d\\\\\\\\ 000695748 007__ cr\cnu|||unuuu 000695748 008__ 131101t20132014sz\a\\\\omb\\\000\0\eng\d 000695748 020__ $$a9783319019703 $$qelectronic book 000695748 020__ $$a3319019708 $$qelectronic book 000695748 020__ $$z9783319019697 000695748 0247_ $$a10.1007/978-3-319-01970-3$$2doi 000695748 035__ $$aSP(OCoLC)ocn861963885 000695748 035__ $$aSP(OCoLC)861963885 000695748 040__ $$aGW5XE$$beng$$erda$$epn$$cGW5XE$$dYDXCP$$dN$T$$dCOO 000695748 049__ $$aISEA 000695748 050_4 $$aQC611.6.Q35 000695748 08204 $$a621.3815/2$$223 000695748 1001_ $$aNowozin, Tobias,$$eauthor. 000695748 24510 $$aSelf-organized quantum dots for memories$$h[electronic resource] :$$belectronic properties and carrier dynamics /$$cTobias Nowozin. 000695748 264_1 $$aCham :$$bSpringer,$$c[2013?] 000695748 264_4 $$c©2014 000695748 300__ $$a1 online resource (xvi, 153 pages) :$$billustrations. 000695748 336__ $$atext$$btxt$$2rdacontent 000695748 337__ $$acomputer$$bc$$2rdamedia 000695748 338__ $$aonline resource$$bcr$$2rdacarrier 000695748 4901_ $$aSpringer theses,$$x2190-5053 000695748 502__ $$bPh.D.$$cTechnical University of Berlin$$d[2013?] 000695748 504__ $$aIncludes bibliographical references. 000695748 5050_ $$aFundamentals -- Charge carriers in quantum dots -- Coupling of QDs to 2D gases -- Measurement methods -- Electronic properties of and storage times in QDs -- Carrier dynamics in quantum dots coupled to a 2DHG -- Summary and Outlook -- Storage time as a function of the localization energy -- Experimental details - Setup -- Samples -- Sample Processing -- DLTS: Error of graphical analysis -- Extrapolation of storage times. 000695748 506__ $$aAccess limited to authorized users. 000695748 520__ $$aToday's semiconductor memory market is divided between two types of memory: DRAM and Flash. Each has its own advantages and disadvantages. While DRAM is fast but volatile, Flash is non-volatile but slow. A memory system based on self-organized quantum dots (QDs) as storage node could combine the advantages of modern DRAM and Flash, thus merging the latter's non-volatility with very fast write times. This thesis investigates the electronic properties of and carrier dynamics in self-organized quantum dots by means of time-resolved capacitance spectroscopy and time-resolved current measurements. The first aim is to study the localization energy of various QD systems in order to assess the potential of increasing the storage time in QDs to non-volatility. Surprisingly, it is found that the major impact of carrier capture cross-sections of QDs is to influence, and at times counterbalance, carrier storage in addition to the localization energy. The second aim is to study the coupling between a layer of self-organized QDs and a two-dimensional hole gas (2DHG), which is relevant for the read-out process in memory systems. The investigation yields the discovery of the many-particle ground states in the QD ensemble. In addition to its technological relevance, the thesis also offers new insights into the fascinating field of nanostructure physics. 000695748 588__ $$aDescription based on online resource; title from PDF title page (SpringerLink, viewed October 7, 2013). 000695748 650_0 $$aQuantum dots. 000695748 650_0 $$aSelf-organizing systems. 000695748 830_0 $$aSpringer theses,$$x2190-5053 000695748 85280 $$bebk$$hSpringerLink 000695748 85640 $$3SpringerLink$$uhttps://univsouthin.idm.oclc.org/login?url=http://dx.doi.org/10.1007/978-3-319-01970-3$$zOnline Access 000695748 909CO $$ooai:library.usi.edu:695748$$pGLOBAL_SET 000695748 980__ $$aEBOOK 000695748 980__ $$aBIB 000695748 982__ $$aEbook 000695748 983__ $$aOnline 000695748 994__ $$a92$$bISE