TY  - GEN
AB  - Nanowire Field Effect Transistor: Basic Principles and Applications places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOS.
AU  - Kim, Dae Mann.
AU  - Jeong, Yoon-Ha.
CN  - SpringerLink
CN  - TA418.9.N35
CY  - New York :
DA  - 2014.
ID  - 695840
KW  - Field-effect transistors.
KW  - Nanostructured materials.
LK  - https://univsouthin.idm.oclc.org/login?url=http://dx.doi.org/10.1007/978-1-4614-8124-9
N2  - Nanowire Field Effect Transistor: Basic Principles and Applications places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOS.
PB  - Springer,
PP  - New York :
PY  - 2014.
SN  - 9781461481249
SN  - 1461481244
T1  - Nanowire field effect transistorsprinciples and applications /
TI  - Nanowire field effect transistorsprinciples and applications /
UR  - https://univsouthin.idm.oclc.org/login?url=http://dx.doi.org/10.1007/978-1-4614-8124-9
ER  -