000695840 000__ 02741cam\a2200433Ma\4500 000695840 001__ 695840 000695840 005__ 20230306135500.0 000695840 006__ m\\\\\o\\d\\\\\\\\ 000695840 007__ cr\cn\nnnunnun 000695840 008__ 131123s2014\\\\nyu\\\\\o\\\\\000\0\eng\d 000695840 020__ $$a9781461481249$$qelectronic book 000695840 020__ $$a1461481244$$qelectronic book 000695840 020__ $$z9781461481232 000695840 035__ $$aSP(OCoLC)ocn863823024 000695840 035__ $$aSP(OCoLC)863823024 000695840 040__ $$aEBLCP$$beng$$epn$$cEBLCP$$dGW5XE$$dN$T$$dIDEBK$$dE7B$$dCOO$$dOCLCQ$$dGGVRL 000695840 049__ $$aISEA 000695840 050_4 $$aTA418.9.N35 000695840 08204 $$a620.5$$a621.3815284 000695840 24500 $$aNanowire field effect transistors$$h[electronic resource] :$$bprinciples and applications /$$cDae Mann Kim, Yoon-Ha Jeong, editors. 000695840 260__ $$aNew York :$$bSpringer,$$c2014. 000695840 300__ $$a1 online resource (292 pages) 000695840 336__ $$atext$$btxt$$2rdacontent 000695840 337__ $$acomputer$$bc$$2rdamedia 000695840 338__ $$aonline resource$$bcr$$2rdacarrier 000695840 504__ $$aIncludes bibliographical references. 000695840 5050_ $$aQuantum Wire and Sub-Bands -- Carrier Concentration and Transport -- P-N Junction Diode: I-V Behavior and Applications -- Silicon Nanowire Field Effect Transistor -- Fabrication of Nanowires and their Applications -- Characterization of Nanowire Devices under Electrostatic Discharge Stress Conditions -- Green Energy Devices -- Nanowire Field Effect Transistors in Optoelectronics -- Nanowire BioFETs: An Overview -- Lab On a Wire: Application of Silicon Nanowires for Nanoscience and Biotechnology -- Nanowire FET Circuit Design : An Overview. 000695840 506__ $$aAccess limited to authorized users. 000695840 520__ $$aNanowire Field Effect Transistor: Basic Principles and Applications places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOS. 000695840 588__ $$aDescription based on print version record. 000695840 650_0 $$aField-effect transistors. 000695840 650_0 $$aNanostructured materials. 000695840 7001_ $$aKim, Dae Mann. 000695840 7001_ $$aJeong, Yoon-Ha. 000695840 77608 $$iPrint version:$$aKim, Dae Mann.$$tNanowire Field Effect Transistors : Principles and Applications.$$dDordrecht : Springer, ©2013$$z9781461481232 000695840 85280 $$bebk$$hSpringerLink 000695840 85640 $$3SpringerLink$$uhttps://univsouthin.idm.oclc.org/login?url=http://dx.doi.org/10.1007/978-1-4614-8124-9$$zOnline Access 000695840 909CO $$ooai:library.usi.edu:695840$$pGLOBAL_SET 000695840 980__ $$aEBOOK 000695840 980__ $$aBIB 000695840 982__ $$aEbook 000695840 983__ $$aOnline 000695840 994__ $$a92$$bISE