Debye screening length: [electronic resource] :: effects of nanostructured materials /: Kamakhya Prasad Ghatak, Sitangshu Bhattacharya.

Ghatak, Kamakhya Prasad,; Bhattacharya, Sitangshu,

doi:10.1007/978-3-319-01339-8

Debye screening length [electronic resource] : effects of nanostructured materials / Kamakhya Prasad Ghatak, Sitangshu Bhattacharya.

Ghatak, Kamakhya Prasad, author.; Bhattacharya, Sitangshu, author.

2014

QC173.4.T48

Available Online

Formats

Format
BibTeX
MARCXML
TextMARC
MARC
DublinCore
EndNote
NLM
RefWorks
RIS

Add to Basket

Cite

Linked e-resources

Linked Resource

Online Access

Details

Title

Debye screening length [electronic resource] : effects of nanostructured materials / Kamakhya Prasad Ghatak, Sitangshu Bhattacharya.

Author

Ghatak, Kamakhya Prasad, author.

ISBN

9783319013398 electronic book
3319013394 electronic book
9783319013381 (print)
3319013386 (print)

DOI

https://doi.org/10.1007/978-3-319-01339-8

Published

Cham : Springer, [2014]

Language

English

Description

1 online resource (xxxiii, 385 pages) : illustrations.

Item Number

10.1007/978-3-319-01339-8 doi

Call Number

QC173.4.T48

Dewey Decimal Classification

537.622

Summary

This monograph solely investigates the Debye Screening Length (DSL) in semiconductors and their nano-structures. The materials considered are quantized structures of non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V and Bismuth Telluride respectively. The DSL in opto-electronic materials and their quantum confined counterparts is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestions for the experimental determination of 2D and 3D DSL and the importance of measurement of band gap in optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring photon induced physical properties) have also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the DSL and the DSL in heavily doped semiconductors and their nanostructures has been investigated. This monograph contains 150 open research problems which form the integral part of the text and are useful for both PhD students and researchers in the fields of solid-state sciences, materials science, nano-science and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures.

Bibliography, etc. Note

Includes bibliographical references and indexes.

Access Note

Access limited to authorized users.

Digital File Characteristics

text file PDF

Source of Description

Description based on online resource; title from PDF title page (SpringerLink, viewed November 11, 2013).

Added Author

Bhattacharya, Sitangshu, author.

Series

Springer tracts in modern physics ; 255. 0081-3869