000704646 000__ 03184cam\a2200505Ii\4500
000704646 001__ 704646
000704646 005__ 20230306135843.0
000704646 006__ m\\\\\o\\d\\\\\\\\
000704646 007__ cr\un\nnnunnun
000704646 008__ 140416s2014\\\\sz\\\\\\ob\\\\000\0\eng\d
000704646 0167_ $$a016698024$$2Uk
000704646 020__ $$z9783319057491
000704646 020__ $$z3319057499
000704646 020__ $$a9783319057507 $$qelectronic book
000704646 020__ $$a3319057502 $$qelectronic book
000704646 035__ $$aSP(OCoLC)ocn876849796
000704646 035__ $$aSP(OCoLC)876849796
000704646 040__ $$aN$T$$beng$$erda$$epn$$cN$T$$dUKMGB$$dYDXCP$$dE7B$$dCDX$$dGW5XE$$dA7U$$dCOO
000704646 049__ $$aISEA
000704646 050_4 $$aQC761.5
000704646 08204 $$a538.44
000704646 1001_ $$aGuyonnet, Jill,$$eauthor.
000704646 24510 $$aFerroelectric domain walls :$$bstatics, dynamics, and functionalities revealed by atomic force microscopy /$$cJill Guyonnet.
000704646 264_1 $$aCham ;$$aNew York :$$bSpringer,$$c2014.
000704646 300__ $$a1 online resource
000704646 336__ $$atext$$btxt$$2rdacontent
000704646 337__ $$acomputer$$bc$$2rdamedia
000704646 338__ $$aonline resource$$bcr$$2rdacarrier
000704646 4901_ $$aSpringer theses
000704646 502__ $$bPh.D.$$cUniversity of Geneva.$$d[2014]
000704646 504__ $$aIncludes bibliographical references.
000704646 506__ $$aAccess limited to authorized users.
000704646 520__ $$aUsing the nanometric resolution of atomic force microscopy techniques, this work explores the rich fundamental physics and novel functionalities of domain walls in ferroelectric materials, the nanoscale interfaces separating regions of differently oriented spontaneous polarization. Due to the local symmetry-breaking caused by the change in polarization, domain walls are found to possess an unexpected lateral piezoelectric response, even when this is symmetry-forbidden in the parent material. This has interesting potential applications in electromechanical devices based on ferroelectric domain patterning. Moreover, electrical conduction is shown to arise at domain walls in otherwise insulating lead zirconate titanate, the first such observation outside of multiferroic bismuth ferrite, due to the tendency of the walls to localize defects. The role of defects is then explored in the theoretical framework of disordered elastic interfaces possessing a characteristic roughness scaling and complex dynamic response. It is shown that the heterogeneous disorder landscape in ferroelectric thin films leads to a breakdown of the usual self-affine roughness, possibly related to strong pinning at individual defects. Finally, the roles of varying environmental conditions and defect densities in domain switching are explored, and shown to be adequately modelled as a competition between screening effects and pinning.
000704646 588__ $$aDescription based on print version record.
000704646 650_0 $$aLead zirconate titanate.
000704646 650_0 $$aDomain structure.
000704646 650_0 $$aFerroelectric crystals.
000704646 650_0 $$aFerroelectric thin films.
000704646 650_0 $$aAtomic force microscopy.
000704646 77608 $$iPrint version:$$tFerroelectric Domain Walls$$z9783319057491$$w(OCoLC)873745312
000704646 830_0 $$aSpringer theses.
000704646 85280 $$bebk$$hSpringerLink
000704646 85640 $$3SpringerLink$$uhttps://univsouthin.idm.oclc.org/login?url=http://dx.doi.org/10.1007/978-3-319-05750-7$$zOnline Access
000704646 909CO $$ooai:library.usi.edu:704646$$pGLOBAL_SET
000704646 980__ $$aEBOOK
000704646 980__ $$aBIB
000704646 982__ $$aEbook
000704646 983__ $$aOnline
000704646 994__ $$a92$$bISE