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Emerging non-volatile memories [electronic resource] / Seungbum Hong, Orlando Auciello, Dirk Wouters, editors.

Hong, Seungbum, editor.; Auciello, Orlando, editor.; Wouters, Dirk J., editor.
2014
TK7895.M4
Available Online
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Title
Emerging non-volatile memories [electronic resource] / Seungbum Hong, Orlando Auciello, Dirk Wouters, editors.
ISBN
9781489975379 electronic book
1489975373 electronic book
9781489975362
DOI
https://doi.org/10.1007/978-1-4899-7537-9
Published
New York : Springer, [2014]
Copyright
©2014
Language
English
Description
1 online resource : illustrations
Item Number
10.1007/978-1-4899-7537-9 doi
Call Number
TK7895.M4
Dewey Decimal Classification
621.39/732
Summary
This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers? understanding of future trends in non-volatile memories.
Bibliography, etc. Note
Includes bibliographical references.
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Access limited to authorized users.
Source of Description
Online resource; title from PDF title page (viewed November 20, 2014).
Added Author
Hong, Seungbum, editor.
Auciello, Orlando, editor.
Wouters, Dirk J., editor.
Available in Other Form
Print version: 9781489975362
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Part I: Ferroic Memories
Review of the Science and Technology for Low and High-density Non-volatile Ferroelectric Memories
Hybrid CMOS/magnetic memories (MRAM) and logic circuits
Emerging Multi-Ferroic Memories
Part II: Resistance and Phase Change Memories
Phase-Change Materials for Data Storage Applications
Emerging Oxide Resistance Change Memories
Oxide based memristive nanodevices
Part III: Probe Memories
Ferroelectric Probe Storage Devices.

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