@article{722973,
      author = {Srivastava, Viranjay M., and Singh, Ghanshyam,},
      url = {http://library.usi.edu/record/722973},
      title = {MOSFET technologies for double-pole four-throw  radio-frequency switch [electronic resource] /},
      abstract = {This book provides analysis and discusses the design of  various MOSFET technologies which are used for the design  of Double-Pole Four-Throw (DP4T) RF switches for next  generation communication systems. The authors discuss the  design of the (DP4T) RF switch by using the Double-Gate  (DG) MOSFET, as well as the Cylindrical Surrounding  double-gate (CSDG) MOSFET. The effect of HFO2 (high  dielectric material) in the design of DG MOSFET and CSDG  MOSFET is also explored. Coverage includes comparison of  Single-gate MOSFET and Double-gate MOSFET switching  parameters, as well as testing of MOSFETs parameters using  image acquisition. Provides a single-source reference to  the latest technologies for the design of Double-gate  MOSFET, Cylindrical Surrounding double-gate MOSFET and HFO2  based MOSFET; Explains the design of RF switches using the  technologies presented and simulates switches; Verifies  parameters and discusses feasibility of devices and  switches.},
      doi = {https://doi.org/10.1007/978-3-319-01165-3},
      recid = {722973},
      pages = {1 online resource (xv, 199 pages) :},
}