TY  - GEN
N2  - This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition. Provides a single-source reference to the latest technologies for the design of Double-gate MOSFET, Cylindrical Surrounding double-gate MOSFET and HFO2 based MOSFET; Explains the design of RF switches using the technologies presented and simulates switches; Verifies parameters and discusses feasibility of devices and switches.
DO  - 10.1007/978-3-319-01165-3
DO  - doi
AB  - This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition. Provides a single-source reference to the latest technologies for the design of Double-gate MOSFET, Cylindrical Surrounding double-gate MOSFET and HFO2 based MOSFET; Explains the design of RF switches using the technologies presented and simulates switches; Verifies parameters and discusses feasibility of devices and switches.
T1  - MOSFET technologies for double-pole four-throw radio-frequency switch
AU  - Srivastava, Viranjay M.,
AU  - Singh, Ghanshyam,
VL  - 122
CN  - TK7871.95
ID  - 722973
KW  - Metal oxide semiconductor field-effect transistors.
SN  - 9783319011653
SN  - 3319011650
SN  - 3319011642
SN  - 9783319011646
TI  - MOSFET technologies for double-pole four-throw radio-frequency switch
LK  - https://univsouthin.idm.oclc.org/login?url=http://link.springer.com/10.1007/978-3-319-01165-3
UR  - https://univsouthin.idm.oclc.org/login?url=http://link.springer.com/10.1007/978-3-319-01165-3
ER  -