000722973 000__ 03131cam\a2200469Ki\4500
000722973 001__ 722973
000722973 005__ 20230306140324.0
000722973 006__ m\\\\\o\\d\\\\\\\\
000722973 007__ cr\cn\nnnunnun
000722973 008__ 131107s2014\\\\sz\a\\\\ob\\\\001\0\eng\d
000722973 020__ $$a9783319011653$$qelectronic book
000722973 020__ $$a3319011650$$qelectronic book
000722973 020__ $$z9783319011646
000722973 020__ $$a3319011642
000722973 020__ $$a9783319011646
000722973 0247_ $$a10.1007/978-3-319-01165-3$$2doi
000722973 035__ $$aSP(OCoLC)ocn862223406
000722973 035__ $$aSP(OCoLC)862223406
000722973 040__ $$aGW5XE$$beng$$erda$$epn$$cGW5XE$$dYDXCP$$dN$T$$dIDEBK$$dCDX$$dGGVRL$$dOCLCF$$dCOO
000722973 049__ $$aISEA
000722973 050_4 $$aTK7871.95
000722973 08204 $$a621.3815/284$$223
000722973 1001_ $$aSrivastava, Viranjay M.,$$eauthor.
000722973 24510 $$aMOSFET technologies for double-pole four-throw radio-frequency switch$$h[electronic resource] /$$cViranjay M. Srivastava, Ghanshyam Singh.
000722973 264_1 $$aCham :$$bSpringer,$$c2014.
000722973 300__ $$a1 online resource (xv, 199 pages) :$$billustrations (some color).
000722973 336__ $$atext$$btxt$$2rdacontent
000722973 337__ $$acomputer$$bc$$2rdamedia
000722973 338__ $$aonline resource$$bcr$$2rdacarrier
000722973 4901_ $$aAnalog Circuits and Signal Processing,$$x1872-082X ;$$v122
000722973 504__ $$aIncludes bibliographical references and index.
000722973 5050_ $$aDesign of Double-Pole Four-Throw RF Switch -- Design of Double-Gate MOSFET -- Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET -- Cylindrical Surrounding Double-Gate RF MOSFET -- Hafnium Dioxide Based Double-Pole Four-Throw Double-Gate RF CMOS Switch -- Testing of MOSFET Surfaces Using Image Acquisition -- Conclusions and Future Scope.
000722973 506__ $$aAccess limited to authorized users.
000722973 520__ $$aThis book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition. Provides a single-source reference to the latest technologies for the design of Double-gate MOSFET, Cylindrical Surrounding double-gate MOSFET and HFO2 based MOSFET; Explains the design of RF switches using the technologies presented and simulates switches; Verifies parameters and discusses feasibility of devices and switches.
000722973 588__ $$aDescription based on online resource; title from PDF title page (SpringerLink, viewed October 14, 2013).
000722973 650_0 $$aMetal oxide semiconductor field-effect transistors.
000722973 7001_ $$aSingh, Ghanshyam,$$eauthor.
000722973 830_0 $$aAnalog circuits and signal processing series ;$$v122.
000722973 852__ $$bebk
000722973 85640 $$3SpringerLink$$uhttps://univsouthin.idm.oclc.org/login?url=http://link.springer.com/10.1007/978-3-319-01165-3$$zOnline Access$$91397441.1
000722973 909CO $$ooai:library.usi.edu:722973$$pGLOBAL_SET
000722973 980__ $$aEBOOK
000722973 980__ $$aBIB
000722973 982__ $$aEbook
000722973 983__ $$aOnline
000722973 994__ $$a92$$bISE