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000727374 020__ $$a9783319188966$$qelectronic book
000727374 020__ $$a3319188968$$qelectronic book
000727374 020__ $$z9783319188959
000727374 0247_ $$a10.1007/978-3-319-18896-6$$2doi
000727374 035__ $$aSP(OCoLC)ocn910513042
000727374 035__ $$aSP(OCoLC)910513042
000727374 040__ $$aN$T$$beng$$erda$$epn$$cN$T$$dN$T$$dGW5XE$$dYDXCP$$dIDEBK$$dE7B$$dNUI$$dCOO$$dEBLCP$$dVLB
000727374 049__ $$aISEA
000727374 050_4 $$aTK7871.96.T45$$bZ34 2015eb
000727374 08204 $$a621.381528$$223
000727374 1001_ $$aZaki, Tarek,$$eauthor.
000727374 24510 $$aShort-channel organic thin-film transistors$$h[electronic resource] :$$bfabrication, characterization, modeling and circuit demonstration /$$cTarek Zaki.
000727374 264_1 $$aCham :$$bSpringer,$$c[2015]
000727374 300__ $$a1 online resource.
000727374 336__ $$atext$$btxt$$2rdacontent
000727374 337__ $$acomputer$$bc$$2rdamedia
000727374 338__ $$aonline resource$$bcr$$2rdacarrier
000727374 4901_ $$aSpringer theses
000727374 504__ $$aIncludes bibliographical references.
000727374 5050_ $$aMotivation -- Introduction to Organic Electronics -- Organic Thin-Film Transistors -- Fabrication Process -- Static Characterization -- Admittance Characterization -- Scattering Parameter Characterization -- Digital-to-Analog Converters -- Conclusion.
000727374 506__ $$aAccess limited to authorized users.
000727374 520__ $$aThis work takes advantage of high-resolution silicon stencil masks to build air-stable complementary OTFTs using a low-temperature fabrication process. Plastic electronics based on organic thin-film transistors (OTFTs) pave the way for cheap, flexible and large-area products. Over the past few years, OTFTs have undergone remarkable advances in terms of reliability, performance and scale of integration. Many factors contribute to the allure of this technology; the masks exhibit excellent stiffness and stability, thus allowing OTFTs with submicrometer channel lengths and superb device uniformity to be patterned. Furthermore, the OTFTs employ an ultra-thin gate dielectric that provides a sufficiently high capacitance to enable the transistors to operate at voltages as low as 3 V. The critical challenges in this development are the subtle mechanisms that govern the properties of aggressively scaled OTFTs. These mechanisms, dictated by device physics, are well described and implemented into circuit-design tools to ensure adequate simulation accuracy.
000727374 650_0 $$aThin film transistors.
000727374 650_0 $$aOrganic thin films.
000727374 77608 $$iPrint version:$$z9783319188959
000727374 830_0 $$aSpringer theses.
000727374 852__ $$bebk
000727374 85640 $$3SpringerLink$$uhttps://univsouthin.idm.oclc.org/login?url=http://link.springer.com/10.1007/978-3-319-18896-6$$zOnline Access$$91397441.1
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000727374 980__ $$aEBOOK
000727374 980__ $$aBIB
000727374 982__ $$aEbook
000727374 983__ $$aOnline
000727374 994__ $$a92$$bISE