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000735837 020__ $$z9781118844762
000735837 020__ $$a9781118844793$$qelectronic book
000735837 035__ $$a(CaPaEBR)ebr10888205
000735837 035__ $$a(OCoLC)884595415
000735837 040__ $$aCaPaEBR$$beng$$erda$$epn$$cCaPaEBR
000735837 05014 $$aTK7871.95$$b.G368 2015eb
000735837 08204 $$a621.3815/284$$223
000735837 24500 $$aGaN transistors for efficient power conversion$$h[electronic resource] /$$cAlex Lidow [and three others].
000735837 250__ $$aSecond edition.
000735837 264_1 $$aChichester, England :$$bWiley,$$c2015.
000735837 264_4 $$c©2015
000735837 300__ $$a1 online resource (269 pages) :$$billustrations (some color), tables
000735837 336__ $$atext$$2rdacontent
000735837 337__ $$acomputer$$2rdamedia
000735837 338__ $$aonline resource$$2rdacarrier
000735837 504__ $$aIncludes bibliographical references at the end of each chapters and index.
000735837 506__ $$aAccess limited to authorized users.
000735837 588__ $$aDescription based on print version record.
000735837 650_0 $$aField-effect transistors.
000735837 650_0 $$aGallium nitride.
000735837 7001_ $$aLidow, Alex,$$eauthor.
000735837 77608 $$iPrint version:$$tGaN transistors for efficient power conversion.$$bSecond edition.$$dChichester, England : Wiley, c2015 $$z9781118844762 $$w2014014560
000735837 852__ $$bebk
000735837 85640 $$3ProQuest Ebook Central Academic Complete$$uhttps://univsouthin.idm.oclc.org/login?url=http://site.ebrary.com/lib/usiricelib/Doc?id=10888205$$zOnline Access
000735837 909CO $$ooai:library.usi.edu:735837$$pGLOBAL_SET
000735837 980__ $$aEBOOK
000735837 980__ $$aBIB
000735837 982__ $$aEbook
000735837 983__ $$aOnline