Defects and impurities in silicon materials [electronic resource] : an introduction to atomic-level silicon engineering / Yutaka Yoshida, Guido Langouche, editors.
Yoshida, Yutaka, editor.; Langouche, Guido, editor.
2015
TK7871.15.S55
Available Online

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Title Defects and impurities in silicon materials [electronic resource] : an introduction to atomic-level silicon engineering / Yutaka Yoshida, Guido Langouche, editors.
ISBN 9784431558002 electronic book
4431558004 electronic book
9784431557999
DOI https://doi.org/10.1007/978-4-431-55800-2
Published Tokyo : Springer, 2015.
Language English
Description 1 online resource (xv, 487 pages) : illustrations.
Item Number 10.1007/978-4-431-55800-2 doi
Call Number TK7871.15.S55
Dewey Decimal Classification 620.1/93
Summary This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.
Access Note Access limited to authorized users.
Digital File Characteristics text file PDF
Added Author Yoshida, Yutaka, editor.
Langouche, Guido, editor.
Series Lecture notes in physics ; 916.
Available in Other Form Print version: 9784431557999
Linked Resources Online Access
Record Appears in Online Resources > Ebooks
All Resources
Diffusion and point defects in silicon materials
Density functional modeling of defects and impurities in silicon materials
Electrical and optical defect evaluation techniques for electronic and solar grade silicon
Intrinsic point defect engineering during single crystal Si and Ge growth from a melt
Computer simulation of crystal growth for CZ-Si single crystals and Si solar cells
Oxygen precipitation in silicon
Defect characterization by electron beam induced current and cathode luminescence methods
Nuclear methods to study defects and impurities in Si materials using heavy ion accelerators
Defect Engineering in silicon materials.

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