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000746231 020__ $$a9784431558002$$qelectronic book
000746231 020__ $$a4431558004$$qelectronic book
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000746231 0247_ $$a10.1007/978-4-431-55800-2$$2doi
000746231 035__ $$aSP(OCoLC)ocn945948458
000746231 035__ $$aSP(OCoLC)945948458
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000746231 050_4 $$aQC610.9-611.8
000746231 08204 $$a620.1/93$$223
000746231 24500 $$aDefects and impurities in silicon materials$$h[electronic resource] :$$ban introduction to atomic-level silicon engineering /$$cYutaka Yoshida, Guido Langouche, editors.
000746231 264_1 $$aTokyo :$$bSpringer,$$c2015.
000746231 300__ $$a1 online resource (xv, 487 pages) :$$billustrations.
000746231 336__ $$atext$$btxt$$2rdacontent
000746231 337__ $$acomputer$$bc$$2rdamedia
000746231 338__ $$aonline resource$$bcr$$2rdacarrier
000746231 347__ $$atext file$$bPDF$$2rda
000746231 4901_ $$aLecture Notes in Physics,$$x0075-8450 ;$$vv. 916
000746231 5050_ $$aDiffusion and point defects in silicon materials -- Density functional modeling of defects and impurities in silicon materials -- Electrical and optical defect evaluation techniques for electronic and solar grade silicon -- Intrinsic point defect engineering during single crystal Si and Ge growth from a melt -- Computer simulation of crystal growth for CZ-Si single crystals and Si solar cells -- Oxygen precipitation in silicon -- Defect characterization by electron beam induced current and cathode luminescence methods -- Nuclear methods to study defects and impurities in Si materials using heavy ion accelerators -- Defect Engineering in silicon materials.
000746231 506__ $$aAccess limited to authorized users.
000746231 520__ $$aThis book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.
000746231 650_0 $$aSilicon.
000746231 650_0 $$aNanosilicon.
000746231 650_0 $$aPhysics.
000746231 650_0 $$aSolid state physics.
000746231 650_0 $$aNanoscience.
000746231 650_0 $$aNanostructures.
000746231 650_0 $$aSemiconductors.
000746231 650_0 $$aNanotechnology.
000746231 650_0 $$aMaterials.
000746231 7001_ $$aYoshida, Yutaka,$$eeditor.
000746231 7001_ $$aLangouche, Guido,$$eeditor.
000746231 77608 $$iPrint version:$$z9784431557999
000746231 830_0 $$aLecture notes in physics ;$$v916.
000746231 85280 $$bebk$$hSpringerLink
000746231 85640 $$3SpringerLink$$uhttps://univsouthin.idm.oclc.org/login?url=http://link.springer.com/10.1007/978-4-431-55800-2$$zOnline Access$$91397441.1
000746231 909CO $$ooai:library.usi.edu:746231$$pGLOBAL_SET
000746231 980__ $$aEBOOK
000746231 980__ $$aBIB
000746231 982__ $$aEbook
000746231 983__ $$aOnline
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