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000751742 019__ $$a931579392$$a932322430
000751742 020__ $$a9788132225089$$q(electronic book)
000751742 020__ $$a8132225082$$q(electronic book)
000751742 020__ $$z9788132225072
000751742 0247_ $$a10.1007/978-81-322-2508-9$$2doi
000751742 035__ $$aSP(OCoLC)ocn916446594
000751742 035__ $$aSP(OCoLC)916446594$$z(OCoLC)931579392$$z(OCoLC)932322430
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000751742 050_4 $$aTK7871.95$$b.F86 2016eb
000751742 08204 $$a621.3815/284$$223
000751742 24500 $$aFundamentals of bias temperature instability in MOS transistors$$h[electronic resource] :$$bcharacterization methods, process and materials impact, DC and AC modeling /$$cSouvik Mahapatra, editor.
000751742 264_1 $$aNew Delhi :$$bSpringer,$$c[2016]
000751742 300__ $$a1 online resource.
000751742 336__ $$atext$$btxt$$2rdacontent
000751742 337__ $$acomputer$$bc$$2rdamedia
000751742 338__ $$aonline resource$$bcr$$2rdacarrier
000751742 4901_ $$aSpringer series in advanced microelectronics ;$$vvolume 139
000751742 504__ $$aIncludes bibliographical references and index.
000751742 5050_ $$aIntroduction: Bias Temperature Instability (BTI) in N and P Channel MOSFETs -- Characterization Methods for BTI Degradation and Associated Gate Insulator Defects -- Physical Mechanism of BTI Degradation? Direct Estimation of Trap Generation and Trapping -- Physical Mechanism of BTI Degradation?Modeling of Process and Material Dependence -- Reaction-Diffusion Model -- Modeling of DC and AC NBTI Degradation and Recovery for SiON and HKMG MOSFETs -- Index.
000751742 506__ $$aAccess limited to authorized users.
000751742 520__ $$aThis book aims to cover different aspects of Bias Temperature Instability (BTI). BTI remains as an important reliability concern for CMOS transistors and circuits. Development of BTI resilient technology relies on utilizing artefact-free stress and measurement methods and suitable physics-based models for accurate determination of degradation at end-of-life, and understanding the gate insulator process impact on BTI. This book discusses different ultra-fast characterization techniques for recovery artefact free BTI measurements. It also covers different direct measurements techniques to access pre-existing and newly generated gate insulator traps responsible for BTI. The book provides a consistent physical framework for NBTI and PBTI respectively for p- and n- channel MOSFETs, consisting of trap generation and trapping. A physics-based compact model is presented to estimate measured BTI degradation in planar Si MOSFETs having differently processed SiON and HKMG gate insulators, in planar SiGe MOSFETs and also in Si FinFETs. The contents also include a detailed investigation of the gate insulator process dependence of BTI in differently processed SiON and HKMG MOSFETs. The book then goes on to discuss Reaction-Diffusion (RD) model to estimate generation of new traps for DC and AC NBTI stress, and Transient Trap Occupancy Model (TTOM) to estimate charge occupancy of generated traps and their contribution to BTI degradation. Finally, a comprehensive NBTI modeling framework including TTOM enabled RD model and hole trapping to predict time evolution of BTI degradation and recovery during and after DC stress for different stress and recovery biases and temperature, during consecutive arbitrary stress and recovery cycles, and during AC stress at different frequency and duty cycle. The contents of this book should prove useful to academia and professionals alike.
000751742 650_0 $$aMetal oxide semiconductor field-effect transistors.
000751742 7001_ $$aMahapatra, Souvik,$$eeditor.
000751742 77608 $$iPrint version:$$z9788132225072
000751742 830_0 $$aSpringer series in advanced microelectronics ;$$vv. 139.
000751742 852__ $$bebk
000751742 85640 $$3SpringerLink$$uhttps://univsouthin.idm.oclc.org/login?url=http://link.springer.com/10.1007/978-81-322-2508-9$$zOnline Access$$91397441.1
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000751742 980__ $$aBIB
000751742 982__ $$aEbook
000751742 983__ $$aOnline
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