Dispersion relations in heavily-doped nanostructures [electronic resource] / Kamakhya Prasad Ghatak.
Ghatak, Kamakhya Prasad, author.
2016
QC611
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Title Dispersion relations in heavily-doped nanostructures [electronic resource] / Kamakhya Prasad Ghatak.
Author Ghatak, Kamakhya Prasad, author.
ISBN 9783319210001 (electronic book)
3319210009 (electronic book)
9783319209999
DOI https://doi.org/10.1007/978-3-319-21000-1
Published Cham : Springer, ©2016.
Language English
Description 1 online resource (lv, 625 pages) : illustrations.
Item Number 10.1007/978-3-319-21000-1 doi
Call Number QC611
Dewey Decimal Classification 537.622
Summary This book presents the dispersion relation in heavily doped nano-structures. The materials considered are III-V, II-VI, IV-VI, GaP, Ge, Platinum Antimonide, stressed, GaSb, Te, II-V, HgTe/CdTe superlattices and Bismuth Telluride semiconductors. The dispersion relation is discussed under magnetic quantization and on the basis of carrier energy spectra. The influences of magnetic field, magneto inversion, and magneto nipi structures on nano-structures is analyzed. The band structure of optoelectronic materials changes with photo-excitation in a fundamental way according to newly formulated electron dispersion laws. They control the quantum effect in optoelectronic devices in the presence of light. The measurement of band gaps in optoelectronic materials in the presence of external photo-excitation is displayed. The influences of magnetic quantization, crossed electric and quantizing fields, intense electric fields on the on the dispersion relation in heavily doped semiconductors and super-lattices are also discussed. This book contains 200 open research problems which form the integral part of the text and are useful for graduate students and researchers. The book is written for post graduate students, researchers and engineers.
Bibliography, etc. Note Includes bibliographical references and index.
Access Note Access limited to authorized users.
Digital File Characteristics text file PDF
Series Springer tracts in modern physics ; 265.
Available in Other Form Print version: 9783319209999
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From the Contents: The DR in Quantum Wells (QWs) of Heavily Doped(HD) Non-Parabolic Semiconductors
The DR in Nano-Wires (NWs) of Heavily Doped (HD) Non-Parabolic Semiconductors
The DR in Quantum Box (QB) of Heavily Doped (HD) Non-Parabolic Semiconductors
The DR in doping superlattices of HD Non-Parabolic Semiconductors
The DR in Accumulation and Inversion Layers of Non-Parabolic Semiconductors.

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